Toshiba Semiconductor and Storage Optoisolatori - Transistor, uscita fotovoltaica

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Tensione - Isolamento

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Tensione - Uscita (Max)

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Corrente - Uscita / Canale

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Corrente - DC diretta (If) (Max)

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Saturazione Vce (Max)

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CategoriaSemiconduttori / Isolatori / Optoisolatori - Transistor, uscita fotovoltaica

ProduttoreToshiba Semiconductor and Storage

Record 466

Pagina 13/16

Numero parte	Produttore	Descrizione	Disponibile	Serie	Numero di canali	Tensione - Isolamento	Rapporto di trasferimento corrente (min)	Rapporto di trasferimento corrente (massimo)	Tempo di accensione / spegnimento (tipico)	Tempo di salita / discesa (tipico)	Tipo di ingresso	Tipo di output	Tensione - Uscita (Max)	Corrente - Uscita / Canale	Tensione - Avanti (Vf) (Tip)	Corrente - DC diretta (If) (Max)	Saturazione Vce (Max)	Temperatura di esercizio	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore
TLP280-4(GB-TP,J,F	Toshiba Semiconductor and Storage	OPTOISO 2.5KV 4CH TRANS 16-SOP	54.094	-	4	2500Vrms	100% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	AC, DC	Transistor	80V	50mA	1.15V	50mA	400mV	-55°C ~ 100°C	Surface Mount	16-SOIC (0.173", 4.40mm Width)	16-SOP
4N26(SHORT,F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV TRANS W/BASE 6DIP	4.554	-	1	2500Vrms	20% @ 10mA	-	-	2µs, 200µs	DC	Transistor with Base	30V	100mA	1.15V	80mA	500mV	-55°C ~ 100°C	Through Hole	6-DIP (0.300", 7.62mm)	6-DIP
6N138(TP1,F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV DARL W/BASE 8SMD	8.640	-	1	2500Vrms	300% @ 1.6mA	-	1µs, 4µs	-	DC	Darlington with Base	18V	60mA	1.65V	20mA	-	0°C ~ 70°C	Surface Mount	8-SMD, Gull Wing	8-SMD
TLP331(BV,F)	Toshiba Semiconductor and Storage	OPTOISO 5KV TRANS W/BASE 6DIP	7.884	-	1	5000Vrms	200% @ 1mA	1200% @ 1mA	10µs, 8µs	8µs, 8µs	DC	Transistor with Base	55V	50mA	1.15V	50mA	400mV	-55°C ~ 100°C	Through Hole	6-DIP (0.300", 7.62mm)	6-DIP
TLP631(BL,F)	Toshiba Semiconductor and Storage	OPTOISO 5KV TRANS W/BASE 6DIP	2.214	-	1	5000Vrms	200% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor with Base	55V	50mA	1.15V	60mA	400mV	-55°C ~ 100°C	Through Hole	6-DIP (0.300", 7.62mm)	6-DIP
TLP631(GR,F)	Toshiba Semiconductor and Storage	OPTOISO 5KV TRANS W/BASE 6DIP	4.446	-	1	5000Vrms	100% @ 5mA	300% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor with Base	55V	50mA	1.15V	60mA	400mV	-55°C ~ 100°C	Through Hole	6-DIP (0.300", 7.62mm)	6-DIP
TLP781(BL,F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-DIP	5.508	-	1	5000Vrms	200% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor	80V	50mA	1.15V	60mA	400mV	-55°C ~ 110°C	Through Hole	4-DIP (0.300", 7.62mm)	4-DIP
TLP781(D4-GR,F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-DIP	6.102	-	1	5000Vrms	100% @ 5mA	300% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor	80V	50mA	1.15V	60mA	400mV	-55°C ~ 110°C	Through Hole	4-DIP (0.300", 7.62mm)	4-DIP
TLP781(F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-DIP	3.312	-	1	5000Vrms	50% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor	80V	50mA	1.15V	60mA	400mV	-55°C ~ 110°C	Through Hole	4-DIP (0.300", 7.62mm)	4-DIP
TLP781(GB,F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-DIP	4.104	-	1	5000Vrms	100% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor	80V	50mA	1.15V	60mA	400mV	-55°C ~ 110°C	Through Hole	4-DIP (0.300", 7.62mm)	4-DIP
TLP281-4(TP,J,F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV 4CH TRANS 16-SOP	608	-	4	2500Vrms	50% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor	80V	50mA	1.15V	50mA	400mV	-55°C ~ 100°C	Surface Mount	16-SOIC (0.173", 4.40mm Width)	16-SOP
TLP781(GB-LF6,F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-SMD	5.256	-	1	5000Vrms	100% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor	80V	50mA	1.15V	60mA	400mV	-55°C ~ 110°C	Surface Mount	4-SMD, Gull Wing	4-SMD
TLP781(GB-TP6,F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-SMD	5.238	-	1	5000Vrms	100% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor	80V	50mA	1.15V	60mA	400mV	-55°C ~ 110°C	Surface Mount	4-SMD, Gull Wing	4-SMD
4N36(SHORT,F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV TRANS W/BASE 6DIP	7.542	-	1	2500Vrms	40% @ 10mA	-	3µs, 3µs	-	DC	Transistor with Base	30V	100mA	1.15V	60mA	300mV	-55°C ~ 100°C	Through Hole	6-DIP (0.300", 7.62mm)	6-DIP
TLP512(F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 2.5KV TRANS 6-DIP	3.780	-	1	2500Vrms	15% @ 16mA	-	800ns, 800ns (Max)	-	DC	Transistor	15V	8mA	1.65V	25mA	-	-55°C ~ 100°C	Through Hole	6-DIP (0.300", 7.62mm)	6-DIP
TLP285(TP,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SOP	3.978	-	1	3750Vrms	50% @ 5mA	600% @ 5mA	3µs, 3µs	2µs, 3µs	DC	Transistor	80V	50mA	1.15V	50mA	400mV	-55°C ~ 110°C	Surface Mount	4-SOIC (0.173", 4.40mm Width)	4-SOP
TLP283(TP,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 2.5KV TRANS 4-SOP	4.896	-	1	2500Vrms	100% @ 1mA	400% @ 1mA	7.5µs, 70µs	-	DC	Transistor	100V	50mA	1.15V	50mA	400mV	-55°C ~ 100°C	Surface Mount	4-SOIC (0.173", 4.40mm Width)	4-SOP
TLP626(TP1,F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-SMD	8.748	-	1	5000Vrms	100% @ 1mA	1200% @ 1mA	10µs, 8µs	8µs, 8µs	AC, DC	Transistor	55V	50mA	1.15V	60mA	400mV	-55°C ~ 100°C	Surface Mount	4-SMD, Gull Wing	4-SMD
TLP719(F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 5KV TRANS 6-SDIP GW	4.788	-	1	5000Vrms	20% @ 16mA	-	800ns, 800ns (Max)	-	DC	Transistor	20V	8mA	1.65V	25mA	-	-55°C ~ 100°C	Surface Mount	6-SOIC (0.268", 6.80mm Width)	6-SDIP Gull Wing
TLP559(IGM,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 2.5KV TRANS 8-DIP	5.112	-	1	2500Vrms	25% @ 10mA	75% @ 10mA	450ns, 450ns	-	DC	Transistor	20V	8mA	1.65V	25mA	-	-55°C ~ 100°C	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
TLP290(E)	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO	5.994	-	1	3750Vrms	50% @ 5mA	400% @ 5mA	7µs, 7µs	4µs, 7µs	AC, DC	Transistor	80V	50mA	1.25V	50mA	300mV	-55°C ~ 110°C	Surface Mount	4-SOIC (0.179", 4.55mm Width)	4-SO
TLP291(E)	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO	3.996	-	1	3750Vrms	50% @ 5mA	400% @ 5mA	7µs, 7µs	4µs, 7µs	DC	Transistor	80V	50mA	1.25V	50mA	300mV	-55°C ~ 110°C	Surface Mount	4-SOIC (0.179", 4.55mm Width)	4-SO
TLP291(GR,E)	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO	4.842	-	1	3750Vrms	100% @ 5mA	300% @ 5mA	7µs, 7µs	4µs, 7µs	DC	Transistor	80V	50mA	1.25V	50mA	300mV	-55°C ~ 110°C	Surface Mount	4-SOIC (0.179", 4.55mm Width)	4-SO
TLP290(GR-TP,E)	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO	2.090	-	1	3750Vrms	100% @ 5mA	300% @ 5mA	7µs, 7µs	4µs, 7µs	AC, DC	Transistor	80V	50mA	1.25V	50mA	300mV	-55°C ~ 110°C	Surface Mount	4-SOIC (0.179", 4.55mm Width)	4-SO
TLP290(TP,E)	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO	2.178	-	1	3750Vrms	50% @ 5mA	400% @ 5mA	7µs, 7µs	4µs, 7µs	AC, DC	Transistor	80V	50mA	1.25V	50mA	300mV	-55°C ~ 110°C	Surface Mount	4-SOIC (0.179", 4.55mm Width)	4-SO
TLP290(GB-TP,E)	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO	40.227	-	1	3750Vrms	100% @ 5mA	400% @ 5mA	7µs, 7µs	4µs, 7µs	AC, DC	Transistor	80V	50mA	1.25V	50mA	300mV	-55°C ~ 110°C	Surface Mount	4-SOIC (0.179", 4.55mm Width)	4-SO
TLP290(BLL-TP,E)	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO	6.192	-	1	3750Vrms	200% @ 5mA	400% @ 5mA	7µs, 7µs	4µs, 7µs	AC, DC	Transistor	80V	50mA	1.25V	50mA	300mV	-55°C ~ 110°C	Surface Mount	4-SOIC (0.179", 4.55mm Width)	4-SO
TLP291(GR-TP,E)	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO	6.912	-	1	3750Vrms	100% @ 5mA	300% @ 5mA	7µs, 7µs	4µs, 7µs	DC	Transistor	80V	50mA	1.25V	50mA	300mV	-55°C ~ 110°C	Surface Mount	4-SOIC (0.179", 4.55mm Width)	4-SO
TLP2403(F)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV DARL W/BASE 8SO	5.904	-	1	3750Vrms	500% @ 1.6mA	-	300ns, 1µs	-	DC	Darlington with Base	18V	60mA	1.45V	20mA	-	-40°C ~ 100°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
TLP2409(F)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 8SO	5.040	-	1	3750Vrms	20% @ 16mA	-	800ns, 800ns (Max)	-	DC	Transistor	20V	16mA	1.57V	25mA	-	-55°C ~ 125°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO

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