Transphorm gallium nitride devices power DAH Solar's world's first fully integrated micro-inverter photovoltaic system

The future of next-generation power systems, Transphorm, a leading global supplier of gallium nitride (GaN) power semiconductors, announces, DAH Solar Co., Ltd. The world's first integrated photovoltaic (PV) system uses the Transphorm gallium nitride platform from DAH Solar, a subsidiary of Anhui Daheng New Energy Technology Company. The integrated PV system has been applied to Daheng Energy's latest SolarUnit products. DAH Solar highly rated Transphorm's GaN FETs used in the system, believing that the use of Transphorm's power devices was key to producing a smaller, lighter and more reliable solar panel system, while also delivering higher total generation with lower energy consumption. The design results reinforce Transphorm's value proposition in the renewable energy market, where gallium nitride has a potential market size (TAM) of more than $500 million. This is another demonstration of Transphorm's One Core GaN Platform (Crossing the Power Spectrum).

Transphorm's 150 mΩ and 70 mΩ gallium nitride field effect transistors are used in the design architecture of the DAH Solar SolarUnit product line, including the DC-DC and DC-AC ends. SolarUnit is available in three models with power outputs of 800 W, 920 W, or 1500 W, corresponding to peak efficiencies of 97.16%, 97.2%, and 97.55%, respectively. Gallium nitride devices enable higher switching frequencies and power densities than silicon-based solutions commonly used today. What's more, the two gallium nitride power tubes used in the system are in a PQFN88 high-performance package that can be paired with common gate drivers, helping DAH Solar reduce design time.

Gu Yong, General Manager of DAH Solar, said: "Our company has always been committed to producing innovative photovoltaic products and is always looking for more advanced technologies to improve our products and bring users a better and more efficient experience. We consider Transphorm the authority on gallium nitride production, and its advanced gallium nitride field-effect transistor is the perfect addition to the new SolarUnit product line. "Transphorm's devices are easier to use in system design and offer superior performance, allowing us to continue to deliver legacy benefits to our products."

Another gallium nitride industry first

Transphorm's power devices are designed for a wide range of power supply applications and meet power conversion requirements at a wide range of power levels - from 45W to 10+kW. The Transphorm GaNFET portfolio includes 650 V and 900 V devices as well as 1200 V devices under development, all certified to the JEDEC and AEC-Q101 standards. Become the preferred solution for power adapters, computer Psus, and even various industrial UPS and electric mobility systems.

Transphorm's technological innovations have once again set a new benchmark for the entire gallium nitride power semiconductor industry, while also helping customers launch new and disruptive applications in different markets - such as DAH Solar's photovoltaic systems. This is thanks to Transphorm's normally closed SuperGaN® platform, which uses the d-mode architecture to leverage the inherent benefits of gallium nitride materials. The superior structural design characteristics of this high-performance gallium nitride platform give it a competitive advantage with improved drive, ease of design, reliability and manufacturability.

Kenny Yim, Vice President of Sales for Transphorm Asia, said: "The selection of the Transphorm gallium nitride platform by market leaders such as DAH Solar is yet another testament to our ability to bring value to a wide range of advanced applications. Solar inverters and other high-power applications require highly reliable, high-performance power semiconductors that can operate for decades in harsh environments. The use of Transphorm's SuperGaN technology helps reduce power losses, thereby minimizing the thermal stress required for other built-in components in the design. "This is a remarkable result compared to other gallium nitride and silicon-based solutions, and is the most significant advantage Transphorm gallium nitride devices can bring to next-generation power systems."