New MOSFET product family for automotive and industrial solutions

     Infineon Technologies AG has introduced the 750V G1 discrete CoolSiC MOSFETs to meet the growing demand for higher efficiency and power density in industrial and automotive power applications. The product family includes industrial and automotive grade SiC MOSFETs optimized for totem pole PFC, T-type, LLC/CLLC, DAB, HERIC, buck/boost, and PSFB topologies. Mosfets are ideal for typical industrial applications such as electric vehicle charging, industrial drives, solar and energy storage systems, solid state circuit breakers, UPS systems, servers/data centers, telecommunications, as well as the automotive sector such as OBC, DC-DC converters, etc.

     The device technology features excellent RDS (on) x Q fr and excellent RDS(on) x Q oss FOMs for ultra-high efficiency in hard and soft switch topologies, respectively. Its unique combination of high threshold voltage (V GS(th), type 4.3V) and low Q GD/Q GS ratio provides high robustness to parasitic conduction and enables unipolar gate drive, resulting in increased power density and reduced system cost. All devices feature the company's proprietary patch technology, which provides excellent thermal impedance for equivalent chip sizes. Highly reliable gate oxide design and certification standards provide robust and long-term performance.

     With an RDS range of 8mOhm to 140mOhm at 25 ° C, the new product family meets a wide range of needs. Its design ensures lower conduction and switching losses, improving overall system efficiency. Its innovative package minimizes thermal resistance, helps improve heat dissipation, and optimizes power loop inductors in the circuit, resulting in high power density and reduced system costs. Notably, the product range features a cutting-edge QDPAK top-cooled package.