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Infineon has announced the H7 version of its Gen7 650V TRENCHSTOP igbt

dic 25 2023 2023-12 Connectors Infineon Technologies
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With the introduction of the discrete 650 V IGBT7 H7 version, Infineon Technologies has expanded the family of TRENCHSTOP IGBTs to the 7th generation. The devices have a cutting-edge EC7 co-packed diode that has a sophisticated emitter-controlled architecture. These, in conjunction with high-speed technology, are intended to meet the growing demand for environmentally responsible and highly efficient power solutions.

     With the introduction of the discrete 650 V IGBT7 H7 version, Infineon Technologies has expanded the family of TRENCHSTOP IGBTs to the 7th generation. The devices have a cutting-edge EC7 co-packed diode that has a sophisticated emitter-controlled architecture. These, in conjunction with high-speed technology, are intended to meet the growing demand for environmentally responsible and highly efficient power solutions.

     Utilizing the most recent micro-pattern trench technology, the TRENCHSTOP IGBT7 H7 provides superior control and performance, resulting in a significant loss reduction, enhanced efficiency, and increased power density. As a consequence, the device is ideal for string inverters, energy storage systems (ESS), electric vehicle charging applications, and traditional applications such as industrial UPS and welding.

     The 650 V TRENCHSTOP IGBT7 H7 can deliver up to 150 A in a discrete design. The portfolio comprises 40 A to 150 A variants available in four distinct package types: TO-247-3 HCC, TO-247-4, TO-247-3 Plus, and TO-244 Plus. The TO-247-3 HCC variant of the TRENCHSTOP IGBT 7 H7 has a considerable creepage distance. The TO-247 4-pin packages (standard: IKZA, Plus: IKY) are ideally adapted for improved performance, as they not only reduce switching losses, but also offer additional advantages such as lower voltage overshoot, minimized conduction losses, and the lowest reverse current loss. With these characteristics, the TRENCHSTOP IGBT 7 H7 simplifies the design and reduces the need for parallel device connections.

     In addition, the 650 V TRENCHSTOP IGBT 7 H7 is resistant to precipitation for dependable operation in harsh environments. According to the relevant tests of JEDEC47/20/22, notably HV-H3TRB, the device is qualified for industrial use, making it suitable for outdoor applications. Designed to satisfy the demand for green and energy-efficient power applications, the IGBT provides significant enhancements over its predecessors. Consequently, the TRENCHSTOP IGBT 7 H7 is the ideal complement to the NPC1 topology, which is frequently utilized in applications such as solar and ESS.

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