Taiwan Semiconductor Corporation Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreTaiwan Semiconductor Corporation
Record 5.388
Pagina 91/180
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO201AD |
5.814 |
|
- | Standard | 200V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A DO214AA |
4.248 |
|
Automotive, AEC-Q101 | Schottky | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 3A DO214AB |
3.456 |
|
- | Schottky | 50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO214AB |
5.004 |
|
Automotive, AEC-Q101 | Standard | 200V | 4A | 1.25V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO214AB |
8.442 |
|
Automotive, AEC-Q101 | Standard | 400V | 4A | 1.25V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 10A DO214AB |
4.410 |
|
Automotive, AEC-Q101 | Standard | 800V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 10A DO214AB |
3.852 |
|
Automotive, AEC-Q101 | Standard | - | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 12A DO214AB |
2.574 |
|
Automotive, AEC-Q101 | Standard | 400V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AA |
6.588 |
|
Automotive, AEC-Q101 | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A DO214AA |
5.526 |
|
- | Schottky | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 200V 3A TO277A |
6.372 |
|
- | Avalanche | 200V | 3A | 1.88V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO201AD |
2.070 |
|
- | Standard | 400V | 4A | 1.3V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 6A DO201AD |
6.372 |
|
- | Standard | 50V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A DO201AD |
4.482 |
|
- | Standard | 100V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 5A DO214AA |
6.624 |
|
Automotive, AEC-Q101 | Schottky | 90V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 15A DO214AB |
2.592 |
|
- | Standard | 400V | 15A | 1.1V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 15A DO214AB |
4.392 |
|
- | Standard | 600V | 15A | 1.1V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 15A DO214AB |
2.100 |
|
- | Standard | 800V | 15A | 1.1V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 15A DO214AB |
6.984 |
|
- | Standard | - | 15A | 1.1V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 400V 3A TO277A |
5.166 |
|
- | Avalanche | 400V | 3A | 1.55V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 400V | 58pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 8A DO201AD |
2.628 |
|
- | Schottky | 40V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 8A DO201AD |
3.222 |
|
- | Schottky | 40V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO201AD |
3.276 |
|
- | Standard | 600V | 4A | 1.7V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 4A DO201AD |
8.244 |
|
Automotive, AEC-Q101 | Standard | 150V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO201AD |
3.708 |
|
Automotive, AEC-Q101 | Standard | 200V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 8A DO201AD |
2.754 |
|
- | Schottky | 50V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 8A DO201AD |
4.284 |
|
- | Schottky | 60V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 4A DO201AD |
7.344 |
|
Automotive, AEC-Q101 | Standard | 500V | 4A | 1.7V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO201AD |
7.470 |
|
Automotive, AEC-Q101 | Standard | 600V | 4A | 1.7V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 6A DO201AD |
4.716 |
|
Automotive, AEC-Q101 | Standard | 50V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |