Taiwan Semiconductor Corporation Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreTaiwan Semiconductor Corporation
Record 5.388
Pagina 74/180
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AA |
6.660 |
|
- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 3A DO214AA |
3.024 |
|
- | Standard | 300V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AA |
2.592 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AA |
5.310 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 2A DO214AC |
3.330 |
|
- | Standard | 600V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 2µA @ 600V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 2A DO214AA |
7.074 |
|
Automotive, AEC-Q101 | Standard | 50V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 2A DO214AA |
4.878 |
|
Automotive, AEC-Q101 | Standard | 100V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 2A DO214AA |
6.228 |
|
Automotive, AEC-Q101 | Standard | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO214AA |
2.214 |
|
Automotive, AEC-Q101 | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 2A DO214AA |
4.284 |
|
Automotive, AEC-Q101 | Standard | 300V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 2A DO214AA |
7.776 |
|
Automotive, AEC-Q101 | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 3A DO201AD |
7.992 |
|
- | Schottky | 20V | 3A | 475mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 200pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO201AD |
3.400 |
|
- | Standard | 50V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO201AD |
3.528 |
|
- | Standard | 100V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO201AD |
8.334 |
|
- | Standard | 200V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO201AD |
2.268 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 2A DO214AA |
6.174 |
|
- | Standard | 300V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 2A DO214AA |
6.462 |
|
- | Standard | 100V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 2µA @ 100V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 2A DO214AA |
7.722 |
|
- | Standard | 150V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 2µA @ 150V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AB |
6.156 |
|
- | Standard | 50V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 2A DO214AA |
5.526 |
|
- | Standard | 600V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 2A DO214AA |
6.354 |
|
- | Standard | 100V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO214AA |
6.570 |
|
- | Standard | 200V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 2A DO214AA |
5.958 |
|
- | Standard | 300V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 2A DO214AA |
8.172 |
|
- | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AB |
3.564 |
|
- | Standard | 50V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
8.280 |
|
- | Standard | 100V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 3A DO214AB |
5.562 |
|
- | Standard | 150V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
3.490 |
|
- | Standard | 200V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
4.392 |
|
- | Standard | 200V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |