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Taiwan Semiconductor Corporation Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreTaiwan Semiconductor Corporation
Record 5.388
Pagina 61/180
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
HER206G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
3.816
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
ES1BHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AC
8.946
Automotive, AEC-Q101
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
16pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1CHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AC
6.696
Automotive, AEC-Q101
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
16pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1DHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
8.046
Automotive, AEC-Q101
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
16pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1FHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A DO214AC
2.430
Automotive, AEC-Q101
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
16pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SRT110HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A TS-1
7.614
Automotive, AEC-Q101
Schottky
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
SS215L RUG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 2A SUB SMA
5.400
-
Schottky
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HER204G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO204AC
8.406
-
Standard
300V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
S1AB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AA
8.136
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1BB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AA
6.912
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1DB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AA
2.322
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1DBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AA
8.154
Automotive, AEC-Q101
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1GB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AA
6.534
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1GBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AA
4.428
Automotive, AEC-Q101
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1JB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
3.654
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1JBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
3.456
Automotive, AEC-Q101
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1KB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO214AA
2.232
-
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1KBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO214AA
6.858
Automotive, AEC-Q101
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1MB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A DO214AA
8.100
-
Standard
-
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S1MBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A DO214AA
8.694
Automotive, AEC-Q101
Standard
-
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S2KHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO214AA
7.632
Automotive, AEC-Q101
Standard
800V
2A
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 800V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S2MHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A DO214AA
3.418
Automotive, AEC-Q101
Standard
-
2A
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 1000V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RS2A R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AA
3.258
-
Standard
50V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RS2B R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
8.748
-
Standard
100V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RS2D R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
6.138
-
Standard
200V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK29AHM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 2A DO214AC
4.050
Automotive, AEC-Q101
Schottky
90V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1ALHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
7.470
Automotive, AEC-Q101
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1CLHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A SUB SMA
7.164
Automotive, AEC-Q101
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HER205G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO204AC
2.952
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER206G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
8.460
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C