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Taiwan Semiconductor Corporation Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreTaiwan Semiconductor Corporation
Record 5.388
Pagina 6/180
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
HS1ML R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A SUB SMA
108.978
-
Standard
1000V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
15pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ESH1C R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AC
55.224
-
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
15ns
1µA @ 150V
16pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
SS1H10LS RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A SOD123HE
88.488
-
Schottky
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 100V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
SS215LW RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 2A SOD123W
86.892
-
Schottky
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 150V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
ES1BL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
52.830
-
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
BYG20G R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO214AC
138.720
-
Standard
400V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 400V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK24A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 2A DO214AC
117.126
-
Schottky
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SK26A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 2A DO214AC
32.760
-
Schottky
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
HS2MA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1.5A DO214AC
49.212
-
Standard
1000V
1.5A
1.7V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS2MA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1.5A DO214AC
19.644
-
Standard
1000V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS1H20LS RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 1A SOD123HE
358.860
-
Schottky
200V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 200V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
ES1DL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
27.504
-
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1GL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
25.434
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1FL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
17.310
-
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
TSSE3U45HRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 3A SOD123HE
208.236
-
Schottky
45V
3A
470mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
ES1HL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 1A SUB SMA
32.190
-
Standard
500V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SK210A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A DO214AC
18.036
-
Schottky
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
TSSE3H60 RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SOD123HE
156.288
-
Schottky
60V
3A
600mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
TSSW3U60 RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SOD123W
97.062
-
Schottky
60V
3A
580mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
TSSE3U60 RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SOD123HE
53.154
-
Schottky
60V
3A
580mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
SS310LWHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A SOD123W
28.932
-
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
20µA @ 100V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
SS36L RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
27.678
-
Schottky
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS115 R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A DO214AC
15.804
-
Schottky
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2HA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 2A DO214AC
14.550
-
Standard
500V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2GA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO214AC
25.410
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2FA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO214AC
18.822
-
Standard
300V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK34A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A DO214AC
48.504
-
Schottky
40V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK36A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A DO214AC
26.334
-
Schottky
60V
3A
720mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK215A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 2A DO214AC
31.110
-
Schottky
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2JA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AC
90.270
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C