Taiwan Semiconductor Corporation Raddrizzatori - Singoli

Serie

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Tipo di diodo

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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Temperatura di esercizio - Giunzione

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Mostra filtri

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

ProduttoreTaiwan Semiconductor Corporation

Record 5.388

Pagina 49/180

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
ES1AHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	4.194	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1F M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO214AC	3.528	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	18pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1G M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	5.994	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	18pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LDHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	2.862	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LGHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	3.024	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LJHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	3.762	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SR202HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO204AC	4.608	Automotive, AEC-Q101	Schottky	20V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 125°C
SR203HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO204AC	6.138	Automotive, AEC-Q101	Schottky	30V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 125°C
SR204HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO204AC	4.932	Automotive, AEC-Q101	Schottky	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 125°C
SR205HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A DO204AC	6.660	Automotive, AEC-Q101	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SR206HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A DO204AC	7.182	Automotive, AEC-Q101	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
ES1BHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	8.856	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1CHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AC	8.604	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1DHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	4.176	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1FHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO214AC	3.438	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HT11G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	3.006	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT12G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	2.700	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT13G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	5.616	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT14G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	5.436	-	Standard	300V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT11G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	7.164	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT12G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	3.240	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT13G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A TS-1	5.904	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT14G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	6.606	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT15HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A TS-1	5.274	Automotive, AEC-Q101	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT16HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A TS-1	7.416	Automotive, AEC-Q101	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS19L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	5.472	-	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
FR205G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	3.474	-	Standard	600V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR207G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 2A DO204AC	3.834	-	Standard	-	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SR209 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A DO204AC	6.282	-	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SR220 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 2A DO204AC	7.614	-	Schottky	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C

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