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Taiwan Semiconductor Corporation Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreTaiwan Semiconductor Corporation
Record 5.388
Pagina 45/180
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
RS1MHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO214AC
7.326
Automotive, AEC-Q101
Standard
-
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS12HR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO214AC
4.356
Automotive, AEC-Q101
Schottky
20V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SS13HR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO214AC
4.338
Automotive, AEC-Q101
Schottky
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SS14HR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A DO214AC
7.920
Automotive, AEC-Q101
Schottky
40V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SS15HR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 1A DO214AC
6.714
Automotive, AEC-Q101
Schottky
50V
1A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 50V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS16HR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A DO214AC
8.730
Automotive, AEC-Q101
Schottky
60V
1A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1A M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AC
3.546
-
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
16pF @ 1V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1B M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AC
2.610
-
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
16pF @ 1V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1C M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AC
2.646
-
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
16pF @ 1V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1D M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
7.362
-
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
16pF @ 1V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RSFJLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
2.520
Automotive, AEC-Q101
Standard
600V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
BAT43X RSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD523F
6.786
-
Schottky
30V
200mA (DC)
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523F
-55°C ~ 150°C
SS110 M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A DO214AC
4.104
-
Schottky
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SS110HM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A DO214AC
2.574
Automotive, AEC-Q101
Schottky
100V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SS19 M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A DO214AC
6.336
-
Schottky
90V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS19HM2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A DO214AC
6.534
Automotive, AEC-Q101
Schottky
90V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
US1AHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AC
6.498
Automotive, AEC-Q101
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
US1BHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AC
3.006
Automotive, AEC-Q101
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
US1DHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
2.970
Automotive, AEC-Q101
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
US1GHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AC
6.192
Automotive, AEC-Q101
Standard
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
US1JHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AC
3.454
Automotive, AEC-Q101
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
US1KHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO214AC
7.452
Automotive, AEC-Q101
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
US1MHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO214AC
8.802
Automotive, AEC-Q101
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS16L RHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A SUB SMA
3.418
-
Schottky
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS2GA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO214AC
3.402
-
Standard
400V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS2JA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO214AC
4.050
-
Standard
600V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
HER101G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
7.956
-
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER102G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
8.982
-
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER103G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
5.922
-
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER104G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A DO204AL
4.968
-
Standard
300V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C