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Taiwan Semiconductor Corporation Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreTaiwan Semiconductor Corporation
Record 5.388
Pagina 38/180
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
RSFMLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA
4.266
Automotive, AEC-Q101
Standard
-
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFMLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA
3.186
Automotive, AEC-Q101
Standard
-
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS13LS RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SOD123HE
5.328
-
Schottky
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
80pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 125°C
F1T2GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A TS-1
8.352
Automotive, AEC-Q101
Standard
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
SR005 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 500MA DO204AL
7.398
-
Schottky
50V
500mA
700mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
80pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SR006 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 500MA DO204AL
2.034
-
Schottky
60V
500mA
700mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
80pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N5398G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
5.058
-
Standard
800V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5398GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
8.712
Automotive, AEC-Q101
Standard
800V
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5399G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A DO204AC
8.064
-
Standard
-
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5399GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A DO204AC
2.556
Automotive, AEC-Q101
Standard
-
1.5A
1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SS12L RQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A SUB SMA
8.190
-
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 20V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS12L RTG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A SUB SMA
5.400
-
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 20V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS13L RQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SUB SMA
3.420
-
Schottky
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS13L RTG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SUB SMA
3.150
-
Schottky
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS14L RQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A SUB SMA
2.970
-
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS14L RTG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A SUB SMA
2.070
-
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS15L RQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 1A SUB SMA
8.514
-
Schottky
50V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS15L RTG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 1A SUB SMA
2.412
-
Schottky
50V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS16L RQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A SUB SMA
4.428
-
Schottky
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS16L RTG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A SUB SMA
2.610
-
Schottky
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
MMBD3004 RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 350V 225MA SOT23
7.362
-
Standard
350V
225mA
1.25V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 350V
5pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-65°C ~ 150°C
ES1JF R2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SMAF
5.166
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF
-55°C ~ 150°C
RS1JLHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
8.190
Automotive, AEC-Q101
Standard
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1ALHRUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 800MA SUB SMA
8.100
Automotive, AEC-Q101
Standard
50V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
F1T6G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A TS-1
6.390
-
Standard
800V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
S1JL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
8.190
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
SR002 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 500MA DO204AL
7.182
-
Schottky
20V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR003 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 500MA DO204AL
2.232
-
Schottky
30V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
2A07G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A DO204AC
5.670
-
Standard
-
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
F1T6GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A TS-1
8.262
Automotive, AEC-Q101
Standard
800V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C