Taiwan Semiconductor Corporation Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreTaiwan Semiconductor Corporation
Record 5.388
Pagina 38/180
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500MA SUB SMA |
4.266 |
|
Automotive, AEC-Q101 | Standard | - | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500MA SUB SMA |
3.186 |
|
Automotive, AEC-Q101 | Standard | - | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A SOD123HE |
5.328 |
|
- | Schottky | 30V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | 80pF @ 4V, 1MHz | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A TS-1 |
8.352 |
|
Automotive, AEC-Q101 | Standard | 100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 500MA DO204AL |
7.398 |
|
- | Schottky | 50V | 500mA | 700mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | 80pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 500MA DO204AL |
2.034 |
|
- | Schottky | 60V | 500mA | 700mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 80pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.5A DO204AC |
5.058 |
|
- | Standard | 800V | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.5A DO204AC |
8.712 |
|
Automotive, AEC-Q101 | Standard | 800V | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1.5A DO204AC |
8.064 |
|
- | Standard | - | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1.5A DO204AC |
2.556 |
|
Automotive, AEC-Q101 | Standard | - | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 1A SUB SMA |
8.190 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 1A SUB SMA |
5.400 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A SUB SMA |
3.420 |
|
- | Schottky | 30V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A SUB SMA |
3.150 |
|
- | Schottky | 30V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A SUB SMA |
2.970 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A SUB SMA |
2.070 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 1A SUB SMA |
8.514 |
|
- | Schottky | 50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 50V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 1A SUB SMA |
2.412 |
|
- | Schottky | 50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 50V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 1A SUB SMA |
4.428 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 1A SUB SMA |
2.610 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 350V 225MA SOT23 |
7.362 |
|
- | Standard | 350V | 225mA | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 350V | 5pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SMAF |
5.166 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 9pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 800MA SUBSMA |
8.190 |
|
Automotive, AEC-Q101 | Standard | 600V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 800MA SUB SMA |
8.100 |
|
Automotive, AEC-Q101 | Standard | 50V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A TS-1 |
6.390 |
|
- | Standard | 800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SUB SMA |
8.190 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 600V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 500MA DO204AL |
7.182 |
|
- | Schottky | 20V | 500mA | 550mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 500MA DO204AL |
2.232 |
|
- | Schottky | 30V | 500mA | 550mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 2A DO204AC |
5.670 |
|
- | Standard | - | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A TS-1 |
8.262 |
|
Automotive, AEC-Q101 | Standard | 800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |