Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 951/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
MOSFET N-CH 60V 74A TO220 |
4.644 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 74A (Ta) | 4V, 10V | 6.1mOhm @ 37A, 10V | 2.6V @ 1mA | 135nC @ 10V | ±20V | 6900pF @ 20V | - | 2W (Ta), 35W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 Fullpack/TO-220F-3SG | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 900V 6.5A TO220 |
8.424 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 6.5A (Ta) | 10V | 2.7Ohm @ 3.25A, 10V | - | 44nC @ 10V | ±30V | 850pF @ 30V | - | 2W (Ta), 37W (Tc) | 150°C (TA) | Through Hole | TO-220-3 Fullpack/TO-220F-3SG | TO-220-3 Full Pack |
|
|
|
Alpha & Omega Semiconductor |
MOSFET P-CH 20V 0.5A SC89-3L |
6.084 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.8V, 4.5V | 800mOhm @ 500mA, 4.5V | 0.9V @ 250µA | - | ±8V | 100pF @ 10V | - | 280mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 25V 20A POWERPAK |
5.706 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 20A (Tc) | 4.5V, 10V | 8.9mOhm @ 17A, 10V | 2.5V @ 250µA | 22.8nC @ 10V | ±20V | 815pF @ 12.5V | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 40V 36A TO252 |
6.174 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 36A (Tc) | 4.5V, 10V | 16.2mOhm @ 14A, 20V | 2.5V @ 250µA | 100nC @ 10V | ±20V | 2765pF @ 20V | - | 2.1W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 20V 20A TO252 |
3.294 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 20A (Ta) | 4.5V, 10V | 14mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 10V | ±20V | 1300pF @ 10V | - | 39.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 16.8A TO252 |
5.310 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16.8A (Ta) | 4.5V, 10V | 17mOhm @ 20A, 10V | 3V @ 250µA | 42nC @ 10V | ±20V | 1600pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 120A D2PAK |
8.352 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 17mOhm @ 30A, 10V | 2.5V @ 250µA | 285nC @ 10V | ±20V | 11685pF @ 20V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET P-CH 100V 16.7A D2PAK |
7.542 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 16.7A (Tc) | 6V, 10V | 13.8mOhm @ 6A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 2110pF @ 25V | - | 3.75W (Ta), 88.2W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET P-CH 100V 36A D2PAK |
6.426 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 4.5V, 10V | 4.2mOhm @ 14A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | 4600pF @ 50V | - | 18.8W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET P-CH 100V 16.3A TO220AB |
3.744 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 16.3A (Tc) | 6V, 10V | 13.8mOhm @ 6A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 2100pF @ 50V | - | 3.1W (Ta), 73.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Diodes Incorporated |
MOSFET N-CHA 60V 10.2A POWERDI |
3.942 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 10.2A (Ta), 70A (Tc) | 4.5V, 10V | 12mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | ±16V | 1925pF @ 30V | - | 2.3W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 4.5A TO252 |
6.012 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 5.5V @ 200µA | 22.9nC @ 10V | ±20V | 580pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH TO262-7 |
8.658 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.5V, 10V | 2.7mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 5V | ±20V | 6000pF @ 15V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
Infineon Technologies |
MOSFET N-CH TO220-3 |
3.726 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 90µA | 170nC @ 10V | ±16V | 13000pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH TO262-3 |
3.834 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 120µA | 160nC @ 10V | ±20V | 13150pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH TO262-3 |
5.886 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | ±20V | 21900pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH TO262-3 |
2.484 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 8.5mOhm @ 40A, 4.5V | 2.2V @ 60µA | 110nC @ 10V | ±16V | 8180pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH TO220-3 |
8.784 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 72A (Tc) | 10V | 9.4mOhm @ 70A, 10V | 4V @ 120µA | 70nC @ 10V | ±20V | 4810pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH TO220-3 |
4.482 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 8.5mOhm @ 40A, 4.5V | 2.2V @ 60µA | 110nC @ 10V | ±16V | 8180pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH TO220-3 |
8.334 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 4V @ 250µA | 151nC @ 10V | ±20V | 10300pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V DIRECTFETL8 |
5.598 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V DIRECTFETL8 |
2.448 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V TO-220AB |
4.554 |
|
- | - | - | - | - | 4V, 10V | - | - | - | ±16V | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK |
5.418 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 11A DPAK |
8.478 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V DIE ON WAFER |
8.694 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V DIE ON WAFER |
3.672 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V DIE ON WAFER |
5.274 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V DIE ON FILM |
5.166 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |