Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 933/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
7.650 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 2.8A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | ±20V | 570pF @ 100V | - | 31W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
7.560 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 460mOhm @ 7.1A, 10V | 3.9V @ 680µA | 64nC @ 10V | ±20V | 1600pF @ 100V | - | 34W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
4.104 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 45nC @ 10V | ±20V | 1100pF @ 100V | - | 33W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 4.3A TO-251-3 |
3.996 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 650V | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | - | 37W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 600V TO-251-3 |
7.506 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V TO-251-3 |
4.212 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V TO-251-3 |
4.662 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 2.3A (Tc) | 10V | 2.1Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
7.560 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
8.568 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 10.3A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32nC @ 10V | ±20V | 700pF @ 100V | - | 83W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
8.928 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 9.1A (Tc) | 10V | 460mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28nC @ 10V | ±20V | 620pF @ 100V | - | 74W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
8.496 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
2.682 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 5.6A (Tc) | 10V | 800mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | ±20V | 373pF @ 100V | - | 48W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 9A IPAK |
7.650 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta) | 4V, 10V | 225mOhm @ 3A, 10V | 2.6V @ 1mA | 9.8nC @ 10V | ±20V | 490pF @ 20V | - | 1W (Ta), 19W (Tc) | 150°C (TJ) | Through Hole | IPAK/TP | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 250V 3A IPAK |
6.390 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 3A (Ta) | 10V | 2.4Ohm @ 1.5A, 10V | 4.5V @ 1mA | 4.2nC @ 10V | ±30V | 210pF @ 20V | - | 1W (Ta), 26W (Tc) | 150°C (TJ) | Through Hole | IPAK/TP | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 1A IPAK |
7.560 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1A (Ta) | 10V | 13Ohm @ 500mA, 10V | - | 3.8nC @ 10V | ±30V | 65pF @ 20V | - | 1W (Ta), 38W (Tc) | 150°C (TJ) | Through Hole | IPAK/TP | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 300MA SOT223 |
2.682 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 300mA (Tc) | 10V | 8Ohm @ 700mA, 10V | 4.5V @ 50µA | 7.4nC @ 10V | ±30V | 170pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 400V 0.5A SOT223-4 |
8.640 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 500mA (Tc) | 10V | 3.4Ohm @ 600mA, 10V | 4.5V @ 50µA | 6.6nC @ 10V | ±30V | 140pF @ 50V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 600V 0.25A SOT223-4 |
4.032 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 250mA (Tc) | 10V | 15Ohm @ 400mA, 10V | 4.5V @ 50µA | 4.9nC @ 10V | ±30V | 92pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 30V SO8FL |
3.042 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 40V 49A SO8FL |
3.060 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 49A (Ta), 352A (Tc) | 4.5V, 10V | 0.75mOhm @ 50A, 10V | 2V @ 250µA | 181nC @ 10V | ±20V | 12168pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 49A SO8FL |
8.694 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 49A (Ta), 352A (Tc) | 4.5V, 10V | 0.75mOhm @ 50A, 10V | 2V @ 250µA | 181nC @ 10V | ±20V | 12168pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 48A SO8FL |
3.420 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 48A (Ta), 315A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 48A SO8FL |
4.698 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 48A (Ta), 315A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 27A SO8FL |
3.978 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 127A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 25V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 27A SO8FL |
2.664 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 127A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 25V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 40A SO8FL |
4.320 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Ta), 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 120nC @ 10V | ±20V | 8900pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 40A SO8FL |
5.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Ta), 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 120nC @ 10V | ±20V | 8900pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 36A SO8FL |
8.028 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 36A (Ta), 235A (Tc) | 4.5V, 10V | 1.5mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 36A SO8FL |
6.696 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 36A (Ta), 235A (Tc) | 4.5V, 10V | 1.5mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 20A SO8FL |
5.850 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 4.7mOhm @ 50A, 10V | 2V @ 250µA | 33.7nC @ 10V | ±20V | 2164pF @ 25V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |