Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 91/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 55V 14A TO220FP |
16.632 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 14A (Tc) | 10V | 70mOhm @ 7.8A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 100V 12A TO-220AB |
265.734 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 5V | 200mOhm @ 12A, 5V | 2V @ 250µA | - | ±10V | 900pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 500V 9.9A PGTO220 |
22.218 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 9.9A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8nC @ 10V | ±20V | 584pF @ 100V | Super Junction | 73W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 53A TO-220AB |
12.978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 53A (Tc) | 10V | 16.5mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1696pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 40V 100A 8VSON |
17.112 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 4.3mOhm @ 22A, 10V | 2.3V @ 250µA | 16nC @ 4.5V | ±20V | 2640pF @ 20V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 500V 2.4A I-PAK |
25.602 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 9A POWER33 |
26.712 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta), 43A (Tc) | 6V, 10V | 14mOhm @ 9A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 1290pF @ 50V | - | 2.8W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Microchip Technology |
MOSFET N-CH 50V 1.5A SOT89-3 |
18.294 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 1.5A (Tj) | 4.5V, 10V | 300mOhm @ 1.5A, 10V | 2.4V @ 10mA | - | ±20V | 300pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
23.640 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 12.5A DPAK-3 |
52.332 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 12.5A (Ta), 50A (Tc) | 6V, 10V | 10.2mOhm @ 12.5A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 2265pF @ 50V | - | 3.1W (Ta), 127W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 26A TO252-3 |
24.984 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 2.5mOhm @ 90A, 10V | 2.8V @ 95µA | 71nC @ 10V | ±20V | 5200pF @ 30V | - | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
T6 40V MOSFET |
15.108 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 185A (Tc) | 10V | 1.7mOhm @ 50A, 10V | 3.5V @ 250µA | 47nC @ 10V | ±20V | 3300pF @ 25V | - | 3.8W (Ta), 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
139.440 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 14mOhm @ 10A, 10V | 4.5V @ 250µA | 72nC @ 10V | ±20V | 2870pF @ 50V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.1A 8-SOIC |
152.628 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 2.1A (Ta) | 6V, 10V | 155mOhm @ 3A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 600V 11A DPAK |
65.238 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 580pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 43A TO220-3 |
16.140 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 43A (Tc) | 6V, 10V | 18mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1800pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 64A TO-220AB |
28.788 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 1970pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 30V 640MA TO92-3 |
23.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 640mA (Tj) | 5V, 10V | 1.2Ohm @ 1A, 10V | 2.5V @ 1mA | - | ±30V | 190pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET P-CHAN 80V TO252 |
105.042 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 4.5V, 10V | 25mOhm @ 10.5A, 10V | 2.5V @ 250µA | 137nC @ 10V | ±20V | 5350pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK |
36.276 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1700pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 80V 8.8A POWER56 |
271.380 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 8.8A (Ta), 22A (Tc) | 6V, 10V | 16.5mOhm @ 8.8A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 2490pF @ 40V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (5x6), Power56 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET P-CH 240V 0.2A TO92-3 |
28.860 |
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- | P-Channel | MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 3.5V, 10V | 9Ohm @ 200mA, 10V | 2V @ 1mA | - | ±40V | 200pF @ 25V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 60V 79A TO-220AB |
28.734 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 79A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-220AB |
21.528 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 4V, 5V | 270mOhm @ 5.5A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 11A D2PAK |
89.520 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 2A TO220 |
17.832 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 3.25Ohm @ 1A, 10V | 5V @ 100µA | 2.63nC @ 10V | ±30V | 102pF @ 100V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 200A POWERPAK8 |
16.812 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Tc) | 10V | 1.9mOhm @ 10A, 10V | 3.5V @ 250µA | 180nC @ 10V | ±20V | 10210pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 650V 11A DPAK |
21.168 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 19.5nC @ 10V | ±25V | 718pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 9A TO-220AB |
54.798 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 800pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 20A TO-220F |
14.418 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Tc) | 10V | 38.2mOhm @ 5.9A, 10V | 4.5V @ 250µA | 35nC @ 10V | ±20V | 1800pF @ 25V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |