Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 82/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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ON Semiconductor |
MOSFET N-CH 30V SYNCFET POWER56 |
25.158 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 42A (Tc) | 4.5V, 10V | 3mOhm @ 21A, 10V | 3V @ 1mA | 66nC @ 10V | ±20V | 4225pF @ 15V | - | 2.5W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 800V 190MA SOT-223 |
21.270 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 800V | 190mA (Ta) | 10V | 20Ohm @ 190mA, 10V | 4V @ 1mA | - | ±20V | 230pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Microchip Technology |
MOSFET N-CH 350V 0.23A SOT89-3 |
16.470 |
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- | N-Channel | MOSFET (Metal Oxide) | 350V | 230mA (Tj) | 0V | 10Ohm @ 150mA, 0V | - | - | ±20V | 360pF @ 25V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Nexperia |
MOSFET N-CH 100V 60A LFPAK |
219.402 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 12mOhm @ 15A, 10V | 4V @ 1mA | 64nC @ 10V | ±20V | 3500pF @ 50V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 200V 17A DPAK |
32.718 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 17A (Tc) | 10V | 165mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | ±30V | 910pF @ 25V | - | 3W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 800V 2A DPAK |
19.164 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 4.5Ohm @ 1A, 10V | 5V @ 100µA | 3nC @ 10V | 30V | 95pF @ 100V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 100A 8VSON |
19.638 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 2mOhm @ 25A, 10V | 1.8V @ 250µA | 68nC @ 10V | ±20V | 4430pF @ 15V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 60V 19A TO252 |
80.298 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 19A (Tc) | 4.5V, 10V | 60mOhm @ 10A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | 1710pF @ 25V | - | 2.7W (Ta), 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 60V 3.2A PPAK SO-8 |
22.668 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 3.2A (Ta) | 4.5V, 10V | 64mOhm @ 5A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 600V 12A TO252-3 |
18.870 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 160A DPAK |
107.388 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | ±20V | 4880pF @ 15V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET P-CH 60V 0.12A SOT23-3 |
24.180 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 120mA (Tj) | 4.5V, 10V | 10Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 60pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 600V 7A DPAK |
17.142 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
38.988 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 100A (Tc) | 3V, 8V | 3.7mOhm @ 22A, 8V | 1.6V @ 250µA | 15.3nC @ 4.5V | +10V, -8V | 2170pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 42A DPAK |
29.016 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 9mOhm @ 42A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 1510pF @ 25V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3 |
123.774 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 3.6mOhm @ 90A, 10V | 2V @ 45µA | 78nC @ 10V | ±20V | 6300pF @ 20V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8 |
26.928 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 19A, 10V | 2.5V @ 250µA | 18nC @ 4.5V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 40V 22A TSDSON-8 |
43.008 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2V @ 250µA | 52nC @ 10V | ±20V | 3680pF @ 20V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 40V 85A PQFN 5X6 |
33.930 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 6V, 10V | 3.3mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | ±20V | 3174pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-TQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 200V 13A DPAK |
31.752 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | ±30V | 830pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 35A PPAK SO-8 |
84.594 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 10mOhm @ 16.1A, 10V | 2.8V @ 250µA | 71nC @ 10V | ±20V | 2230pF @ 15V | - | 4.2W (Ta), 35.7W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 30V 161A DPAK |
33.600 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4380pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 40A PQFN |
35.730 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2.35V @ 150µA | 120nC @ 10V | ±20V | 7200pF @ 15V | - | 3.6W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11.5A DPAK |
18.264 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | ±30V | 730pF @ 300V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 150V 43A LFPAK |
107.742 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 59mOhm @ 12A, 10V | 4V @ 1mA | 27.9nC @ 10V | ±20V | 1529pF @ 30V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 40V 42A DPAK |
31.806 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56nC @ 4.5V | ±16V | 3810pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 40A 8TSDSON |
51.156 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 40A (Tc) | 6V, 10V | 7.5mOhm @ 20A, 10V | 3.8V @ 36µA | 29.5nC @ 10V | ±20V | 2080pF @ 40V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 24A DPAK |
21.612 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 24A (Tc) | 10V | 95mOhm @ 14A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 890pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 60V 50A D2PAK |
35.226 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 14.8mOhm @ 15A, 10V | 4V @ 1mA | 20.9nC @ 10V | ±20V | 1220pF @ 30V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 179A D2PAK |
32.670 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.2mOhm @ 90A, 10V | 2.2V @ 100µA | 54nC @ 4.5V | ±20V | 4945pF @ 15V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |