Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 76/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH 250V 0.43A SOT223 |
17.328 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 430mA (Ta) | 4.5V, 10V | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | ±20V | 262pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET P-CH 150V 1A 6-MLP |
161.226 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 150V | 1A (Ta) | 6V, 10V | 1.2Ohm @ 1A, 10V | 4V @ 250µA | 4nC @ 10V | ±25V | 210pF @ 75V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V 5A SOT-223 |
81.888 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 60mOhm @ 5A, 10V | 3V @ 250µA | 5.9nC @ 5V | ±20V | 235pF @ 15V | - | 3W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 250V 240MA SOT-89 |
265.278 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 240mA (Ta) | 2.4V, 10V | 8.5Ohm @ 500mA, 10V | 1.8V @ 1mA | 3.65nC @ 10V | ±40V | 72pF @ 25V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
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ON Semiconductor |
MOSFET N-CH 50V 14A DPAK |
51.336 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 14A (Tc) | 10V | 100mOhm @ 14A, 10V | 4V @ 250µA | 40nC @ 20V | ±20V | 570pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 80V 30A POWERPAKSO-8 |
146.976 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Tc) | 4.5V, 10V | 19mOhm @ 8A, 10V | 2.5V @ 250µA | 32nC @ 10V | ±20V | 1400pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 60V 8.4A DPAK |
115.068 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.4A (Tc) | 4.5V, 10V | 155mOhm @ 5A, 10V | 3V @ 250µA | 19nC @ 10V | ±20V | 450pF @ 25V | - | 1.7W (Ta), 20.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFETP-CH 60VPOWERDI3333-8 |
42.930 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 6.1A (Ta), 18A (Tc) | 4.5V, 10V | 50mOhm @ 7A, 10V | 3V @ 250µA | 24.1nC @ 10V | ±20V | 1.293nF @ 30V | - | 1.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 60V 8.83A 3TO252 |
43.056 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.83A (Ta) | 6.2V | 300mOhm @ 10A, 6.2V | 4V @ 250µA | 13nC @ 10V | ±20V | 420pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 23A DPAK |
34.392 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Tc) | 4V, 10V | 45mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | ±16V | 450pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 55V 61.8A LFPAK |
127.404 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 61.8A (Tc) | 10V | 12mOhm @ 20A, 10V | 4V @ 1mA | 35.2nC @ 10V | ±20V | 2067pF @ 25V | - | 105W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 55V 61.8A LFPAK |
31.074 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 61.8A (Tc) | 5V, 10V | 11mOhm @ 20A, 10V | 2.15V @ 1mA | 32nC @ 5V | ±15V | 2880pF @ 25V | - | 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET P-CH 40V 6.2A 8-SOIC |
93.342 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 6.2A (Ta) | 4.5V, 10V | 41mOhm @ 6.2A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 3220pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 60V DPAK |
21.654 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 5.4A (Ta) | 10V | 85mOhm @ 2.9A, 10V | 1V @ 250µA | 24.2nC @ 10V | ±20V | 1021pF @ 30V | - | 2.11W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 5A |
22.104 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 3V, 8V | 30mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | +10V, -8V | 340pF @ 15V | - | 2.4W (Ta), 17W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Nexperia |
MOSFET N-CH 60V LFPAK56 |
57.018 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 5V, 10V | 5.6mOhm @ 25A, 10V | 2.1V @ 1mA | 66.8nC @ 10V | ±20V | 5026pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET P-CH 55V 11A DPAK |
27.696 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
33.090 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11mOhm @ 7.3A, 10V | 3V @ 250µA | 79nC @ 10V | ±20V | 1800pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 55V 46A LFPAK |
263.808 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 46A (Tc) | 5V | 17.3mOhm @ 20A, 10V | 2V @ 1mA | 18nC @ 5V | ±15V | 1992pF @ 25V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 50V 16A TO-252AA |
19.176 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 16A (Tc) | 10V | 47mOhm @ 16A, 10V | 4V @ 250µA | 80nC @ 20V | ±20V | 900pF @ 25V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 150V 2.3A 6SSOT |
22.452 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 2.3A (Ta) | 6V, 10V | 144mOhm @ 2.3A, 10V | 4V @ 250µA | 6nC @ 10V | ±20V | 345pF @ 75V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 30V 11.5A 8SOIC |
21.678 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 11.5A (Ta) | 4.5V, 10V | 10mOhm @ 11.5A, 10V | 3V @ 1mA | 30nC @ 10V | ±20V | 1240pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 75V 45A DPAK |
60.660 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 45A (Tc) | 4.5V, 10V | 24.6mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 3120pF @ 25V | - | 114W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 60V LFPAK56 |
207.828 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 86A (Tc) | 5V, 10V | 7.5mOhm @ 20A, 10V | 2.1V @ 1mA | 31nC @ 5V | ±20V | 4570pF @ 25V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 100V 4.8A 8-PQFN |
24.414 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.8A (Ta), 16.5A (Tc) | 6V, 10V | 56mOhm @ 4.8A, 10V | 4V @ 250µA | 7nC @ 10V | ±20V | 400pF @ 50V | - | 2.5W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 16A DPAK |
23.106 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 640pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 16A DPAK |
21.474 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 640pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 250V 0.205A SOT-89 |
533.172 |
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- | P-Channel | MOSFET (Metal Oxide) | 250V | 205mA (Ta) | 3.5V, 10V | 14Ohm @ 200mA, 10V | 2V @ 1mA | 3.45nC @ 10V | ±40V | 73pF @ 25V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
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Nexperia |
MOSFET N-CH 25V 100A LFPAK |
56.340 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | 1.95V @ 1mA | 39nC @ 10V | ±20V | 2542pF @ 12V | - | 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 60V 60A SO-8FL |
13.203 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 11.2A (Ta) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.3V @ 250µA | 30nC @ 10V | ±20V | 1460pF @ 25V | - | 3.7W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |