Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 747/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 55V 80A I2PAK |
3.348 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 4.8mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 7530pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 80A I2PAK |
3.654 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 11mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | ±20V | 2650pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 80A I2PAK |
3.672 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 7.4mOhm @ 66A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 6130pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 80A I2PAK |
8.280 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 7.3mOhm @ 80A, 10V | 4V @ 250µA | 185nC @ 10V | ±20V | 5830pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 80A I2PAK |
3.400 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 4.5V, 10V | 14mOhm @ 58A, 10V | 2V @ 2mA | 240nC @ 10V | ±20V | 4540pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 0.3A SOT-223 |
6.408 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 300mA (Ta) | 10V | 6Ohm @ 500mA, 10V | 3.7V @ 250µA | 5nC @ 10V | ±20V | 100pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 650V 0.4A SOT-223 |
2.250 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 400mA (Ta) | 10V | 2.5Ohm @ 1.1A, 10V | 3.9V @ 80µA | 13nC @ 10V | ±20V | 200pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 650V 0.4A SOT-223 |
4.734 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 400mA (Ta) | 10V | 2.5Ohm @ 1.1A, 10V | 3.9V @ 80µA | 13nC @ 10V | ±20V | 200pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 0.4A SOT-223 |
6.516 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 400mA (Ta) | 10V | 3Ohm @ 1.1A, 10V | 5.5V @ 80µA | 7.4nC @ 10V | ±20V | 250pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 650V 0.7A SOT-223 |
7.578 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 700mA (Ta) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | ±20V | 400pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 0.7A SOT-223 |
7.650 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 700mA (Ta) | 10V | 1.4Ohm @ 2A, 10V | 5.5V @ 135µA | 12.8nC @ 10V | ±20V | 440pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 0.8A SOT-223 |
3.418 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 800mA (Ta) | 10V | 950mOhm @ 2.8A, 10V | 5.5V @ 200µA | 17nC @ 10V | ±20V | 600pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 1.8A TO-220 |
8.046 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 5.5V @ 80µA | 9.5nC @ 10V | ±20V | 240pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 4.5A TO-220 |
5.652 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 5.5V @ 200µA | 22.9nC @ 10V | ±20V | 580pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO-220 |
6.282 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO-220 |
3.078 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.6mOhm @ 80A, 10V | 4V @ 250µA | 172nC @ 10V | ±20V | 7220pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO-220 |
2.466 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 3.3mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 8000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220 |
6.426 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 6800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220 |
3.762 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4.7mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 7530pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO-220 |
8.802 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 4.5V, 10V | 7.1mOhm @ 66A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 6020pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO-220 |
4.392 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 6.8mOhm @ 68A, 10V | 2V @ 250µA | 246nC @ 10V | ±20V | 7130pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 10.3A TO-220 |
7.812 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Tc) | 10V | 170mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | ±20V | 426pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 10.3A TO-220 |
7.092 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Tc) | 4.5V, 10V | 154mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | ±20V | 444pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-220 |
2.124 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | 5V @ 500µA | 64nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-220 |
4.014 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-220 |
6.030 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 24.3A TO-220 |
7.938 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 24.3A (Tc) | 10V | 160mOhm @ 15.4A, 10V | 3.9V @ 1.2mA | 135nC @ 10V | ±20V | 3000pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 47A TO-220 |
4.950 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 33mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | ±20V | 2500pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 47A TO-220 |
7.668 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | ±20V | 2500pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO-220 |
2.808 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 4.5V, 10V | 16mOhm @ 50A, 10V | 2V @ 2mA | 240nC @ 10V | ±20V | 4540pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |