Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 741/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 55V 25A I2PAK |
3.474 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 25A (Tc) | 5V, 10V | 21.6mOhm @ 17A, 10V | 2.2V @ 20µA | 47nC @ 10V | ±16V | 2260pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 45A TO-262 |
5.850 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 45A (Tc) | 10V | 15.7mOhm @ 23A, 10V | 4V @ 30µA | 57nC @ 10V | ±20V | 2980pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 45A TO-262 |
3.400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 45A (Tc) | 5V, 10V | 13.4mOhm @ 26A, 10V | 2.2V @ 30µA | 75nC @ 10V | ±16V | 3600pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 11A I2PAK |
4.176 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | ±20V | 1100pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 9A I2PAK |
5.778 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | ±20V | 790pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 77A TO-262 |
4.068 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 77A (Tc) | 10V | 9.1mOhm @ 39A, 10V | 4V @ 55µA | 103nC @ 10V | ±20V | 5335pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-262 |
2.880 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 5.4mOhm @ 63A, 10V | 4V @ 110µA | 240nC @ 10V | ±20V | 10760pF @ 25V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-262 |
2.880 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.8mOhm @ 51A, 10V | 4V @ 80µA | 170nC @ 10V | ±20V | 7768pF @ 25V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-262 |
6.822 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 5V, 10V | 4.8mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | ±16V | 13060pF @ 25V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-262 |
8.964 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 5V, 10V | 5.9mOhm @ 56A, 10V | 2.2V @ 80µA | 196nC @ 10V | ±16V | 9417pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-262 |
4.572 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 5V, 10V | 7.9mOhm @ 43A, 10V | 2.2V @ 55µA | 134nC @ 10V | ±16V | 6475pF @ 25V | - | 105W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO-220 |
6.840 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3.1mOhm @ 55A, 10V | 2V @ 100µA | 59nC @ 5V | ±20V | 7624pF @ 15V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO-220 |
2.502 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 4.7mOhm @ 100A, 10V | 2V @ 270µA | 225nC @ 10V | ±20V | 7600pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO-220 |
7.056 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3.8mOhm @ 55A, 10V | 2V @ 70µA | 40nC @ 5V | ±20V | 5203pF @ 15V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO-220 |
5.994 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 5mOhm @ 100A, 10V | 4V @ 270µA | 167nC @ 10V | ±20V | 6100pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 85V 100A TO-220 |
3.222 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 85V | 100A (Tc) | 10V | 5.4mOhm @ 100A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 12100pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO-220 |
3.528 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 5.3mOhm @ 60A, 10V | 2V @ 40µA | 25nC @ 5V | ±20V | 3209pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO-220 |
6.948 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 80A, 10V | 2V @ 180µA | 157nC @ 10V | ±20V | 5100pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO-220 |
6.804 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 6.5mOhm @ 100A, 10V | 4V @ 180µA | 139nC @ 10V | ±20V | 9200pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 85V 100A TO-220 |
3.060 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 85V | 100A (Tc) | 10V | 6.5mOhm @ 100A, 10V | 4V @ 180µA | 138nC @ 10V | ±20V | 9240pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO-220 |
5.022 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 7mOhm @ 80A, 10V | 2V @ 150µA | 126nC @ 10V | ±20V | 4300pF @ 30V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO-220 |
5.778 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 7mOhm @ 80A, 10V | 4V @ 180µA | 118nC @ 10V | ±20V | 4100pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-220 |
3.834 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.6mOhm @ 50A, 10V | 2V @ 40µA | 25nC @ 5V | ±20V | 2782pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO-220 |
5.508 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 8mOhm @ 80A, 10V | 4V @ 150µA | 93nC @ 10V | ±20V | 3500pF @ 30V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 95A TO-220 |
6.138 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 95A (Tc) | 10V | 8.5mOhm @ 95A, 10V | 4V @ 130µA | 100nC @ 10V | ±20V | 6660pF @ 50V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 85V 95A TO-220 |
6.894 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 85V | 95A (Tc) | 10V | 6.4mOhm @ 95A, 10V | 4V @ 130µA | 99nC @ 10V | ±20V | 6690pF @ 40V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220 |
5.670 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 230µA | 480nC @ 10V | ±20V | 21620pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220 |
4.068 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4.4mOhm @ 80A, 10V | 4V @ 150µA | 314nC @ 10V | ±20V | 14230pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220 |
7.380 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 5V, 10V | 3mOhm @ 80A, 10V | 2.2V @ 230µA | 550nC @ 10V | ±16V | 26240pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220 |
8.244 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 5V, 10V | 3.8mOhm @ 80A, 10V | 2.2V @ 150µA | 362nC @ 10V | ±16V | 17270pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |