Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 681/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 30V 19A DIRECTFET |
6.030 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 106A (Tc) | 4.5V, 10V | 5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3765pF @ 20V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 21A 8-SOIC |
8.658 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.35V @ 250µA | 45nC @ 4.5V | ±20V | 3860pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
4.842 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 43A D2PAK |
5.652 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 2400pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 110A D2PAK |
7.542 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | ±20V | 2980pF @ 10V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 20A 8-SOIC |
8.910 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 20A (Ta) | 4.5V, 10V | 4.4mOhm @ 20A, 10V | 2.45V @ 250µA | 33nC @ 4.5V | ±20V | 2890pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK |
8.046 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 920pF @ 25V | - | 3.8W (Ta), 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 9.3A D2PAK |
3.618 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.3A (Tc) | 10V | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 575pF @ 25V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK |
8.100 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 240mOhm @ 8.4A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 1060pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 7.3A 8-SOIC |
5.922 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7.3A (Tc) | 4.5V, 10V | 30mOhm @ 7.3A, 10V | 1V @ 250µA | 28nC @ 10V | ±20V | 550pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 5.3A 8-SOIC |
4.104 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | ±12V | 860pF @ 10V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 4.6A 8-SOIC |
3.186 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 70mOhm @ 4.6A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | 870pF @ 10V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 5.4A 8-SOIC |
7.866 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.4A (Tc) | 2.7V, 4.5V | 60mOhm @ 5.4A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | ±12V | 780pF @ 15V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 12V 9.5A 8-SOIC |
8.928 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 9.5A (Ta) | 2.5V, 4.5V | 20mOhm @ 9.5A, 4.5V | 600mV @ 250µA | 74nC @ 5V | ±12V | 6000pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 40V 6.2A 8-SOIC |
5.526 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 6.2A (Ta) | 4.5V, 10V | 41mOhm @ 6.2A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 3220pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 4.7A 8-SOIC |
8.910 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 30V | 4.7A (Ta) | 4.5V, 10V | 62mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | ±20V | 710pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 5.3A 8-SOIC |
2.736 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 2.7V, 4.5V | 62mOhm @ 2.9A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | ±12V | 780pF @ 15V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 2.2A 8-SOIC |
3.834 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | ±12V | 260pF @ 15V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 6.5A 8-SOIC |
7.722 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 32mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | ±20V | 650pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 6.5A 8-SOIC |
2.556 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | ±20V | 650pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 8.7A 8-SOIC |
7.830 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 8.7A (Ta) | 2.7V, 4.5V | 22mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | ±12V | 1600pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 6.8A 8-SOIC |
5.994 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.8A (Ta) | 2.7V, 4.5V | 35mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | ±12V | 650pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.5A 8-SOIC |
8.298 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 4.5V, 10V | 22mOhm @ 4A, 10V | 1V @ 250µA | 57nC @ 10V | ±20V | 1200pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 6.7A 8-SOIC |
7.884 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 6.7A (Ta) | 2.7V, 4.5V | 40mOhm @ 3.2A, 4.5V | 700mV @ 250µA | 50nC @ 4.5V | ±12V | 1500pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 5.8A 8-SOIC |
3.906 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 45mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | ±20V | 1100pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
7.074 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 10mOhm @ 13A, 10V | 2.25V @ 25µA | 14nC @ 4.5V | ±20V | 1210pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 12V 11.5A 8-SOIC |
7.020 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 11.5A (Tc) | 1.8V, 4.5V | 14mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38nC @ 4.5V | ±8V | 3529pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 5.8A 8-SOIC |
5.184 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 35mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | ±20V | 510pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 4.3A 8-SOIC |
8.712 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 2.7V, 4.5V | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | ±12V | 610pF @ 15V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 11A 8-SOIC |
7.542 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13.5mOhm @ 11A, 10V | 2.5V @ 250µA | 110nC @ 10V | ±20V | 4030pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |