Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 648/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 50V 15.5A TO-220AB |
5.868 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 50V | 15.5A (Tc) | 4.5V | 120mOhm @ 7.8A, 4.5V | 2.5V @ 1mA | - | ±10V | 735pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | P-TO220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 22A TO-220AB |
2.340 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 4.5V | 100mOhm @ 9.5A, 4.5V | 2.5V @ 1mA | - | ±10V | 1500pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 49V 80A TO-220-7 |
6.048 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 49V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232nC @ 10V | ±20V | 4800pF @ 25V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | PG-TO220-7-180 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
MOSFET N-CH 55V 174A SUPER-220 |
5.616 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 174A (Tc) | 10V | 5mOhm @ 101A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 5480pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Infineon Technologies |
MOSFET N-CH 100V 31A I-PAK |
8.244 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 31A (Tc) | 10V | 39mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 1690pF @ 25V | - | 3W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 300V 1.6A 8-SOIC |
2.610 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 1.6A (Ta) | 10V | 400mOhm @ 960mA, 10V | 5V @ 250µA | 33nC @ 10V | ±30V | 730pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 174A D2PAK |
5.544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 174A (Tc) | 10V | 4mOhm @ 104A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3600pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 100V 170MA SOT23-3 |
4.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 10V | 6Ohm @ 170mA, 10V | 2V @ 1mA | - | ±20V | 60pF @ 25V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 100V 170MA SC70-3 |
4.410 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 2V @ 1mA | - | ±20V | 60pF @ 25V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 40V 75A TO-220AB |
3.690 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 35V 6.7A SOT223 |
4.698 |
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- | N-Channel | MOSFET (Metal Oxide) | 35V | 4.8A (Ta), 6.7A (Tc) | 4.5V, 10V | 50mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | ±20V | 950pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 35V 3.8A SOT223 |
7.650 |
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- | P-Channel | MOSFET (Metal Oxide) | 35V | 3.8A (Ta), 5.3A (Tc) | 4.5V, 10V | 75mOhm @ 2.4A, 10V | 1V @ 250µA | 46nC @ 10V | ±20V | 825pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 100V 170MA SOT23-3 |
3.024 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 3V, 4.5V | 8Ohm @ 150mA, 4.5V | 1.5V @ 1mA | - | ±40V | 25pF @ 25V | - | 360mW (Ta) | - | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 115MA SOT-523 |
3.888 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 50mA, 5V | 2V @ 250µA | - | ±20V | 50pF @ 25V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Infineon Technologies |
MOSFET N-CH 30V 65A I-PAK |
4.248 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | 1030pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 13.6A 8-SOIC |
8.982 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13.6A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | 1010pF @ 15V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 56A DPAK |
7.218 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 2.25V @ 250µA | 14nC @ 4.5V | ±20V | 1150pF @ 15V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 140A DPAK |
8.298 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4010pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 140A DPAK |
4.374 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4010pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 140A DPAK |
3.598 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4010pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 94A DPAK |
7.452 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 94A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.25V @ 250µA | 32nC @ 4.5V | ±20V | 2920pF @ 15V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 94A DPAK |
8.802 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 94A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.25V @ 250µA | 32nC @ 4.5V | ±20V | 2920pF @ 15V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 3.7A 8-SOIC |
4.986 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.7A (Ta) | 10V | 79mOhm @ 2.2A, 10V | 2.5V @ 250µA | 59nC @ 10V | ±20V | 1820pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 200V 3.7A 8-SOIC |
7.038 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.7A (Ta) | 10V | 79mOhm @ 2.2A, 10V | 2.5V @ 250µA | 59nC @ 10V | ±20V | 1820pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 250V 3A DPAK |
4.050 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 3A (Tc) | 10V | 1.75Ohm @ 1.5A, 10V | 5V @ 250µA | 5.6nC @ 10V | ±30V | 200pF @ 25V | - | 2.5W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 250V 3.1A DPAK |
4.518 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 250V | 3.1A (Tc) | 10V | 2.1Ohm @ 1.55A, 10V | 5V @ 250µA | 14nC @ 10V | ±30V | 420pF @ 25V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TO-262 |
4.446 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 3mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | ±20V | 8180pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 150V 5.2A 8-SOIC |
6.840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 5.2A (Ta) | 10V | 44mOhm @ 3.1A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 1750pF @ 25V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 60V 9.7A TO-251 |
5.904 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 9.7A (Tc) | 4.5V, 10V | 250mOhm @ 6.8A, 10V | 2V @ 250µA | 21nC @ 10V | ±20V | 450pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | P-TO251-3-1 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 25V 80A TO-262 |
3.598 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 4.2mOhm @ 55A, 10V | 2V @ 60µA | 32nC @ 5V | ±20V | 3877pF @ 15V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |