Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 6/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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ON Semiconductor |
MOSFET P-CH 20V 1.37A SOT-323 |
869.634 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.37A (Ta) | 2.5V, 4.5V | 120mOhm @ 1A, 4.5V | 1.5V @ 250µA | 9nC @ 4.5V | ±8V | 840pF @ 20V | - | 329mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET P-CH 50V 0.13A SOT-23 |
1.611.498 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 130mA (Ta) | 5V | 10Ohm @ 100mA, 5V | 2V @ 250µA | 2.2nC @ 10V | ±20V | 36pF @ 5V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.2A EMT3 |
524.022 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 4.5V | 1.2Ohm @ 200mA, 4.5V | 1V @ 100µA | 1.4nC @ 4.5V | ±10V | 115pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3 | SC-75, SOT-416 |
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Diodes Incorporated |
MOSFET N-CH 50V 300MA SOT23-3 |
5.053.578 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 300mA (Ta) | 1.8V, 5V | 2Ohm @ 50mA, 5V | 1V @ 250µA | - | ±20V | 50pF @ 25V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 0.63A SOT23-3 |
1.652.838 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 630mA (Ta) | 1.8V, 4.5V | 550mOhm @ 540mA, 4.5V | 1V @ 250µA | - | ±8V | 150pF @ 16V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 240V 0.11A SOT23 |
888.906 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 110mA (Ta) | 4.5V, 10V | 14Ohm @ 100mA, 10V | 1.8V @ 56µA | 3.1nC @ 10V | ±20V | 77pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 300MA SOT23-3 |
749.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 50pF @ 25V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V SC-89 |
282.324 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 420mOhm @ 500mA, 4.5V | 1V @ 250µA | 2.7nC @ 8V | ±8V | 43pF @ 10V | - | 220mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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Texas Instruments |
MOSFET N-CH 20V 500MA PICOSTAR |
267.612 |
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FemtoFET™ | N-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 2.8V, 8V | 1190mOhm @ 100mA, 8V | 1.35V @ 2.5µA | 0.281nC @ 10V | 10V | 10.5pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Toshiba Semiconductor and Storage |
MOSFET P CH 30V 6A 2-3Z1A |
258.174 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 1.8V, 10V | 42mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2nC @ 4.5V | ±12V | 560pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Diodes Incorporated |
MOSFET P-CH 30V 2.5A SOT-23 |
1.522.332 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4.5V, 10V | 90mOhm @ 2.5A, 10V | 3V @ 250µA | 8.2nC @ 10V | ±20V | 371.3pF @ 15V | - | 760mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 20V 2.9A SOT23 |
303.900 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.9A (Ta) | 1.5V, 4.5V | 70mOhm @ 3.5A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | ±8V | 745pF @ 10V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 60V 0.2A TO-92 |
1.667.166 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Tc) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 50pF @ 25V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Alpha & Omega Semiconductor |
MOSFET P-CH 20V 3.5A SOT23 |
335.886 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.8V, 10V | 85mOhm @ 3.5A, 10V | 1.4V @ 250µA | 4.4nC @ 4.5V | ±12V | 400pF @ 10V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 5.7A SOT23 |
3.525.492 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.7A (Ta) | 2.5V, 10V | 26.5mOhm @ 5.7A, 10V | 1.5V @ 250µA | 7nC @ 4.5V | ±12V | 630pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 4A SOT23 |
2.078.922 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 2.5V, 10V | 44mOhm @ 4.3A, 10V | 1.3V @ 250µA | 12.2nC @ 4.5V | ±12V | 1200pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 2A SOT23 |
832.110 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 2.5V, 10V | 80mOhm @ 2A, 10V | 1.8V @ 250µA | 3.2nC @ 4.5V | ±12V | 270pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 3.8A SOT23 |
1.104.480 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 2.5V, 10V | 60mOhm @ 3.8A, 10V | 1.8V @ 250µA | 3.2nC @ 4.5V | ±12V | 270pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 4.3A SOT23 |
338.118 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4.3A (Ta) | 4.5V, 10V | 48mOhm @ 4.3A, 10V | 3V @ 250µA | 16nC @ 10V | ±20V | 830pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 5.9A TO-236 |
278.796 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.9A (Tc) | 1.8V, 4.5V | 32mOhm @ 4A, 4.5V | 1V @ 250µA | 36nC @ 8V | ±8V | - | - | 1W (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 30V 0.87A SOT323 |
309.612 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 870mA (Tc) | 4.5V | 440mOhm @ 200mA, 4.5V | 1.5V @ 250µA | 0.65nC @ 4.5V | ±12V | 37pF @ 25V | - | 560mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A SOT23F |
376.188 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | ±8V | 840pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 2A SOT-23F |
619.464 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | 8.3nC @ 10V | +10V, -20V | 330pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Infineon Technologies |
MOSFET N-CH 20V 1.5A SOT23 |
710.976 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | ±12V | 143pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 50V 130MA SOT-23-3 |
737.382 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 130mA (Ta) | 5V | 10Ohm @ 100mA, 5V | 2V @ 250µA | 2.2nC @ 10V | ±20V | 36pF @ 5V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 8V 3.7A SOT-23 |
717.336 |
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- | P-Channel | MOSFET (Metal Oxide) | 8V | - | 1.8V, 4.5V | 52mOhm @ 3.5A, 4.5V | 1V @ 250µA | 15nC @ 4.5V | ±8V | 1173pF @ 4V | - | 960mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 20V 915MA SC-89 |
1.375.398 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 915mA (Ta) | 1.5V, 4.5V | 230mOhm @ 600mA, 4.5V | 1.1V @ 250µA | 1.82nC @ 4.5V | ±6V | 110pF @ 16V | - | 300mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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Diodes Incorporated |
MOSFET P-CH 30V 3A SC59 |
551.526 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 2.5V, 10V | 50mOhm @ 4A, 10V | 1.3V @ 250µA | 25.1nC @ 10V | ±12V | 1326pF @ 15V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 3.6A SOT-23 |
4.415.754 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 1.8V, 4.5V | 35mOhm @ 4A, 4.5V | 1V @ 250µA | 15.4nC @ 4.5V | ±8V | 1610pF @ 10V | - | 810mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 3.5A 2-3Z1A |
3.958.194 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 1.8V, 4V | 126mOhm @ 1A, 4V | 1V @ 1mA | 1.5nC @ 4V | ±12V | 123pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |