Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 563/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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IXYS |
MOSFET N-CH 600V 32A TO-264AA |
5.940 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 250mOhm @ 500mA, 10V | 4.5V @ 8mA | 325nC @ 10V | ±20V | 9000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1200V 20A PLUS247 |
5.004 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 20A (Tc) | 10V | 570mOhm @ 10A, 10V | 6.5V @ 1mA | 193nC @ 10V | ±30V | 11100pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH PLUS247 |
8.208 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 900V | 40A (Tc) | 10V | 230mOhm @ 20A, 10V | 6.5V @ 1mA | 230nC @ 10V | ±30V | 14000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 1200V 24A TO-264 |
5.472 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 24A (Tc) | 10V | 680mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8370pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1KV 18A ISOPLUS247 |
2.088 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 18A (Tc) | 10V | 500mOhm @ 10.5A, 10V | 5V @ 4mA | 170nC @ 10V | ±20V | 5900pF @ 25V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 800V 27A TO-264AA |
5.598 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 27A (Tc) | 10V | 300mOhm @ 13.5A, 10V | 4.5V @ 8mA | 400nC @ 10V | ±20V | 9740pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 800V 27A TO-264 |
3.834 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 27A (Tc) | 10V | 320mOhm @ 500mA, 10V | 4.5V @ 4mA | 170nC @ 10V | ±20V | 7600pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 70A TO-264 |
2.052 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 190mOhm @ 33A, 10V | 5V @ 2.5mA | 330nC @ 10V | ±30V | 13190pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 36A TO-264AA |
6.210 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 180mOhm @ 500mA, 10V | 4.5V @ 8mA | 325nC @ 25V | ±20V | 9000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 47A I4-PAC-5 |
3.762 |
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CoolMOS™, HiPerDyn™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | ±20V | 6800pF @ 100V | - | - | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | ISOPLUSi5-Pak™ |
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IXYS |
MOSFET N-CH 600V 47A I4-PAC-5 |
7.956 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | ±20V | 6800pF @ 100V | - | - | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | ISOPLUSi5-Pak™ |
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IXYS |
MOSFET N-CH 900V 24A PLUS 247 |
5.634 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 900V | 24A (Tc) | 10V | 450mOhm @ 500mA, 10V | 4.5V @ 4mA | 170nC @ 10V | ±20V | 5900pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 23A TO-268(D3) |
5.508 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 23A (Tc) | 10V | 420mOhm @ 500mA, 10V | 4.5V @ 3mA | 130nC @ 10V | ±30V | 4900pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 66A T-MAX |
8.586 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 100mOhm @ 33A, 10V | 5V @ 2.5mA | 330nC @ 10V | ±30V | 13190pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 600V 70A TO-264 |
7.380 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330nC @ 10V | ±30V | 13190pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 900V 7A TO-268 |
6.390 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | 1.5Ohm @ 500mA, 10V | 5V @ 2.5mA | 56nC @ 10V | ±20V | 2200pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 600V 68A TO-268 |
6.516 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 68A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET P-CH 200V 120A PLUS247 |
2.232 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 120A (Tc) | - | 30mOhm @ 60A, 10V | 4.5V @ 250µA | 740nC @ 10V | - | 73000pF @ 25V | - | - | - | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET P-CH 100V 210A PLUS247 |
2.250 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 210A (Tc) | 10V | 7.5mOhm @ 105A, 10V | 4.5V @ 250µA | 740nC @ 10V | ±15V | 69500pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET P-CH 500V 10A TO-247AD |
3.402 |
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- | P-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 900mOhm @ 5A, 10V | 5V @ 250µA | 160nC @ 10V | ±20V | 4700pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
2000V TO 3000V POLAR3 POWER MOSF |
6.498 |
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- | N-Channel | MOSFET (Metal Oxide) | 3000V | 400mA (Tc) | 10V | 190Ohm @ 200mA, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 283pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 800V 48A T-MAX |
8.046 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 49A (Tc) | 10V | 190mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9330pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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IXYS |
MOSFET P-CH -100V -210A TO-264 |
8.424 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 600V 82A PLUS 264 |
3.960 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 82A (Tc) | 10V | 75mOhm @ 41A, 10V | 5V @ 8mA | 240nC @ 10V | ±30V | 23000pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 200V 100A TO-264 |
8.064 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | ±30V | 10200pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 800V 40A ISOPLUS264 |
4.842 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 40A (Tc) | 10V | 150mOhm @ 30A, 10V | 5V @ 8mA | 250nC @ 10V | ±30V | 18000pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264™ | ISOPLUS264™ |
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IXYS |
MOSFET N-CH 100V 100A TO-264AA |
6.066 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 12mOhm @ 75A, 10V | 4V @ 8mA | 360nC @ 10V | ±20V | 9000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1200V 13A ISOPLUS247 |
8.928 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 13A (Tc) | 10V | 630mOhm @ 10A, 10V | 6.5V @ 1mA | 193nC @ 10V | ±30V | 11100pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 800V 27A ISOPLUS247 |
2.448 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 27A (Tc) | 10V | 300mOhm @ 13.5A, 10V | 4.5V @ 4mA | 170nC @ 10V | ±20V | 7600pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 1000V 21A PLUS 247 |
7.650 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 21A (Tc) | 10V | 500mOhm @ 10.5A, 10V | 5.5V @ 4mA | 170nC @ 10V | ±20V | 6900pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |