Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 521/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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IXYS |
MOSFET N-CH 1200V 1.4A TO-252 |
4.158 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 1.4A (Tc) | 10V | - | 4.5V @ 100µA | - | ±20V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 120V 80A TO-263 |
2.124 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 120V | 80A (Tc) | 10V | 17mOhm @ 40A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 4740pF @ 25V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 150V 10A TO-220 |
6.876 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 150V | 10A (Tc) | 10V | 350mOhm @ 5A, 10V | 4.5V @ 250µA | 36nC @ 10V | ±15V | 2210pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET P-CH 150V 15A TO-252 |
2.826 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 150V | 15A (Tc) | 10V | 240mOhm @ 7A, 10V | 4.5V @ 250µA | 48nC @ 10V | ±15V | 3650pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET P-CH 50V 48A TO-252 |
7.866 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 50V | 48A (Tc) | 10V | 30mOhm @ 24A, 10V | 4.5V @ 250µA | 53nC @ 10V | ±15V | 3660pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 850V 3.5A TO220AB |
6.912 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 3.5A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 5.5V @ 250µA | 7nC @ 10V | ±30V | 247pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB (IXFP) | TO-220-3 |
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IXYS |
MOSFET N-CHANNEL 700V 8A TO251 |
6.984 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 500mOhm @ 500mA, 10V | 4.5V @ 250µA | 12nC @ 10V | ±30V | 800pF @ 10V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 | TO-251-3 Stub Leads, IPak |
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IXYS |
MOSFET N-CH |
2.196 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 310mOhm @ 6A, 10V | 5V @ 250µA | 18.5nC @ 10V | ±30V | 1134pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH |
7.758 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 800mA (Tj) | 0V | 21Ohm @ 400mA, 0V | 4V @ 25µA | 14.6nC @ 5V | ±20V | 325pF @ 25V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263HV | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH |
2.538 |
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TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 40V | 230A (Tc) | 10V | 2.9mOhm @ 115A, 10V | 4V @ 250µA | 140nC @ 10V | ±15V | 7400pF @ 25V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
TRENCHFET 60V N-CH TRENCH |
6.876 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 550V 23A TO-263 |
4.176 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | ±20V | 2540pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 15A TO220-3 |
8.604 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | ±20V | 1600pF @ 25V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 9.6A TO-3PF |
7.146 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 9.6A (Tc) | 10V | 390mOhm @ 4.8A, 10V | 4V @ 250µA | 113nC @ 10V | ±30V | 3800pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A DTMOSIV |
3.942 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 40nC @ 10V | ±30V | 1350pF @ 300V | - | 40W (Tc) | - | Through Hole | TO-220 | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
5.994 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.8mOhm @ 100A, 10V | 4V @ 150µA | 225nC @ 10V | ±20V | 7330pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 300V 36A TO-220 |
2.358 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 300V | 36A (Tc) | - | 110mOhm @ 500mA, 10V | - | 70nC @ 10V | - | 2250pF @ 25V | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 44A TO-220 |
4.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 44A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 150V 74A TO-220 |
3.906 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 74A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 12A TO-220FM |
5.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 420mOhm @ 6A, 10V | 4.5V @ 1mA | 35nC @ 10V | ±30V | 1300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 500V 6A TO-220 |
7.992 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | 10V | 500mOhm @ 6A, 10V | 5.5V @ 250µA | 29nC @ 10V | ±30V | 1830pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 5A TO-220 |
6.894 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 740mOhm @ 5A, 10V | 5V @ 100µA | 32nC @ 10V | ±30V | 1610pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 315A DIRECTFET |
7.434 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 130A (Tc) | 10V | 1.6mOhm @ 109A, 10V | 4V @ 250µA | 194nC @ 10V | ±20V | 7471pF @ 25V | - | 3.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET™ Isometric L6 |
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Vishay Siliconix |
MOSFET N-CH 600V 3.5A TO220FP |
3.636 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Tc) | 10V | 1.2Ohm @ 2.1A, 10V | 4V @ 250µA | 39nC @ 10V | ±20V | 1100pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7 |
501 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 6930pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
4.338 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 75V 170A TO-263 |
4.536 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 170A (Tc) | 10V | 5.4mOhm @ 50A, 10V | 4V @ 250µA | 109nC @ 10V | ±20V | 6860pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 12A TO-220SIS |
6.138 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 12A (Ta) | 10V | 570mOhm @ 6A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 1550pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH TO-220 |
3.834 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 310mOhm @ 6A, 10V | 5V @ 250µA | 18.5nC @ 10V | ±30V | 1134pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CH TO-220 |
6.858 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4.5V @ 250µA | 17.7nC @ 10V | ±30V | 1100pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |