Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 486/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Vishay Siliconix |
MOSFET N-CH 40V 50A TO252 |
7.920 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 9mOhm @ 20A, 10V | 5V @ 250µA | 85nC @ 10V | ±20V | 3700pF @ 25V | - | 83.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 11A TO263 |
2.106 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 399mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | ±30V | 545pF @ 100V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 18A TO263 |
6.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Ta), 140A (Tc) | 6V, 10V | 3.2mOhm @ 20A, 10V | 3.2V @ 250µA | 80nC @ 10V | ±20V | 6800pF @ 30V | - | 2.1W (Ta), 268W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A IPAK-OS |
3.474 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | ±30V | 390pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 900V 4.2A I2PAK |
5.724 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 4.2A (Tc) | 10V | 3.3Ohm @ 2.1A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 1100pF @ 25V | - | 3.13W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 11A TO262 |
6.066 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 399mOhm @ 5.5A, 10V | 4V @ 250µA | 13.2nC @ 10V | ±30V | 646pF @ 100V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO-220AB |
8.964 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4.5mOhm @ 40A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | ±20V | 2660pF @ 15V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V S2PAK TO-263 |
8.496 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
6.606 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 660mOhm @ 3.2A, 10V | 4.5V @ 200µA | 20nC @ 10V | ±20V | 543pF @ 100V | - | 62.5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microchip Technology |
MOSFET N-CH 50V 1.2A TO92-3 |
3.294 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 1.2A (Tj) | 4.5V, 10V | 300mOhm @ 3A, 10V | 2.4V @ 10mA | - | ±20V | 300pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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ON Semiconductor |
MOSFET N-CH 80V 48A POWER33 |
7.416 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 14A (Ta), 68A (Tc) | 8V, 10V | 6.5mOhm @ 14A, 10V | 4V @ 250µA | 49nC @ 10V | ±20V | 2775pF @ 40V | - | 2.8W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 25V 46A 2WDSON |
8.118 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 46A (Ta), 180A (Tc) | 4.5V, 10V | 0.8mOhm @ 30A, 10V | 2V @ 250µA | 343nC @ 10V | ±20V | 16000pF @ 12V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 112A TO220F |
7.146 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 112A (Tc) | 4.5V, 10V | 1.9mOhm @ 20A, 10V | 2.3V @ 250µA | 100nC @ 10V | ±20V | 8320pF @ 20V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 11A TO262F |
4.896 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 399mOhm @ 5.5A, 10V | 4V @ 250µA | 13.2nC @ 10V | ±30V | 646pF @ 100V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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ON Semiconductor |
T6 40V LL LFPAK |
8.064 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 0.82mOhm @ 50A, 10V | 2V @ 190µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET P-CH 55V 31A DPAK |
8.485 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | - | 65mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | - | 1200pF @ 25V | - | - | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 23A TO-263AB |
2.106 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 160A (Tc) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | 2.5V @ 250µA | 132nC @ 10V | ±20V | 5200pF @ 15V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CHANNEL 60V 80A ATPAK |
2.070 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 80A (Ta) | 4.5V, 10V | 13mOhm @ 35A, 10V | 2.6V @ 1mA | 115nC @ 10V | ±20V | 5400pF @ 20V | - | 84W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
T6 60V LL LFPAK |
6.930 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 38A (Ta), 250A (Tc) | 4.5V, 10V | 1.36mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO262-3 |
8.190 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 80A, 10V | 2.2V @ 40µA | 72nC @ 10V | ±16V | 5680pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CHANNEL_30/40V |
2.100 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
SUPERFET3 650V TO220 PKG |
4.212 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 360mOhm @ 5A, 10V | 4.5V @ 1mA | 18nC @ 10V | ±30V | 730pF @ 400V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 53.7A SO-8 |
3.150 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 53.7A (Tc) | 7.5V, 10V | 18mOhm @ 20A, 10V | 4.5V @ 250µA | 47nC @ 10V | ±20V | 1286pF @ 75V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 80V 8WDFN |
4.266 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V TO220-3 |
6.174 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 6V, 10V | 6mOhm @ 45A, 10V | 3.3V @ 36µA | 32nC @ 10V | ±20V | 2500pF @ 30V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 900V 9A TO220F |
3.204 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 1.3Ohm @ 4.5A, 10V | 4.5V @ 250µA | 58nC @ 10V | ±30V | 2560pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Nexperia |
PSMN1R0-40ULD/SOT1023/4 LEADS |
4.698 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 280A | - | - | - | 127nC @ 10V | - | - | - | 164W | 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Infineon Technologies |
MOSFET N-CH 150V 9A WDSON-2 |
2.070 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 9A (Ta), 30A (Tc) | 10V | 28mOhm @ 30A, 10V | 4V @ 60µA | 21nC @ 10V | ±20V | 1600pF @ 75V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO263-3 |
8.910 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | 4V @ 90µA | 128nC @ 10V | ±20V | 10400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A D2PAK |
7.884 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |