Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 424/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Diodes Incorporated |
MOSFET N-CH 100V 200MA TO92-3 |
8.028 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 200mA (Ta) | 10V | 10Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 40pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Infineon Technologies |
MOSFET N-CH 30V 16A 8PQFN |
3.454 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 2.35V @ 25µA | 20nC @ 10V | ±20V | 1450pF @ 25V | - | 2.7W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 16A POWERDI333 |
3.168 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 45A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | 42nC @ 10V | ±20V | 2000pF @ 15V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 650V TO-252 |
7.794 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | Super Junction | 68W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 48A SO-8FL |
2.394 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.7A (Ta), 48A (Tc) | 4.5V, 10V | 5.6mOhm @ 30A, 10V | 2.2V @ 250µA | 21.5nC @ 10V | ±20V | 1264pF @ 15V | - | 920mW (Ta), 23.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 11.6A SO8FL |
7.038 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11.6A (Ta), 79A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 10V | 2.2V @ 250µA | 43nC @ 10V | ±20V | 3044pF @ 15V | - | 920mW (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V TO252 T&R |
5.076 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 47.2A (Tc) | 4.5V, 10V | 22mOhm @ 20A, 10V | 3V @ 250µA | 21nC @ 10V | ±20V | 1477pF @ 50V | - | 2.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 30V 8.5A |
6.336 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 8.5A (Ta), 18A (Tc) | 4.5V, 10V | 20mOhm @ 8.5A, 10V | 3V @ 250µA | 46nC @ 10V | ±25V | 2045pF @ 15V | - | 2.3W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V TO252 T&R |
2.916 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 26mOhm @ 10A, 10V | 3V @ 250µA | 18.7nC @ 10V | ±20V | 1091pF @ 20V | - | 2.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 10A PQFN |
5.562 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.2A (Ta), 20A (Tc) | 10V | 115mOhm @ 6.3A, 10V | 4V @ 35µA | 26nC @ 10V | ±20V | 760pF @ 50V | - | 2.8W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3x3) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
3.294 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 4.3A (Tc) | 10V | 400mOhm @ 4.3A, 10V | 4V @ 166µA | 6.7nC @ 10V | ±20V | 260pF @ 30V | - | 19W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 8V-24V U-WLB1515-9 |
6.858 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 85A 8DFN |
7.668 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 44A (Ta), 85A (Tc) | 4.5V, 10V | 2.05mOhm @ 20A, 10V | 2.2V @ 250µA | 60nC @ 10V | ±20V | 3000pF @ 15V | - | 6.2W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Diodes Incorporated |
MOSFET P-CH 8V 10A |
4.518 |
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- | P-Channel | MOSFET (Metal Oxide) | 8V | 10A (Ta) | 2.5V, 4.5V | 10mOhm @ 2A, 4.5V | 1.1V @ 250µA | 10.5nC @ 4.5V | -6V | 1060pF @ 4V | - | 890mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1515-9 | 9-UFBGA, WLBGA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 8A 8SOIC |
5.364 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 60V 19A TO251B |
4.392 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 60V | 19A (Ta) | 4.5V, 10V | 9.5mOhm @ 20A, 10V | 2.4V @ 250µA | 13nC @ 4.5V | ±20V | 1100pF @ 30V | - | 59.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251B | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 16.4A 52A 5DFN |
5.814 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16.4A (Ta), 52A (Tc) | 4.5V, 10V | 4.8mOhm @ 18A, 10V | 2.1V @ 250µA | 18.2nC @ 10V | ±20V | 1670pF @ 15V | - | 2.51W (Ta), 25.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-4 |
2.664 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 10V | 250mOhm @ 1.9A, 10V | 4V @ 270µA | 10.8nC @ 10V | ±20V | 420pF @ 30V | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 250V TO-243AA |
3.546 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | - | 0V | 2.5Ohm @ 300mA, 0V | - | - | ±15V | 230pF @ 20V | Depletion Mode | 1.8W (Ta) | 125°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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IXYS Integrated Circuits Division |
MOSFET N-CH 60V SOT89 |
7.704 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | - | 0V | 1Ohm @ 300mA, 0V | - | - | ±15V | - | Depletion Mode | 1.1W (Ta) | -55°C ~ 125°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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ON Semiconductor |
MOSFET N-CH 30V 10.2A SO8FL |
7.452 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.2A (Ta), 70A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 2516pF @ 15V | - | 920mW (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Rohm Semiconductor |
MOSFET N-CH 60V 2A MPT3 |
3.384 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4V, 10V | 380mOhm @ 1A, 10V | 2.5V @ 1mA | - | ±20V | 200pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | MPT3 | TO-243AA |
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Diodes Incorporated |
MOSFET NCH 30V 16A POWERDI |
2.376 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 55.6A (Tc) | 4.5V, 10V | 6mOhm @ 12A, 10V | 3V @ 250µA | 22.6nC @ 10V | ±20V | 1320pF @ 15V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 9.5A 8-SOIC |
2.430 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9.5A (Ta) | 4.5V, 10V | 8.5mOhm @ 13.5A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | - | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
2.574 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1040pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 20V 35A 1212-8 |
2.142 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 2.5V, 10V | 4mOhm @ 20A, 10V | 1.5V @ 250µA | 180nC @ 10V | ±12V | 5460pF @ 10V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Diodes Incorporated |
MOSFET N-CH 60V 13A POWERDI |
7.866 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 30A (Tc) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 2V @ 250µA | 41.3nC @ 10V | ±20V | 2090pF @ 30V | - | 2.2W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 60V 50A TO252 |
3.744 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 23mOhm @ 12A, 10V | 3V @ 250µA | 20.1nC @ 10V | ±20V | 1143pF @ 25V | - | 2.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Diodes Incorporated |
MOSFET NCH 30V 22A POWERDI |
6.120 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 20A, 10V | 3V @ 250µA | 44nC @ 10V | ±20V | 2370pF @ 15V | - | 2.4W (Ta), 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 30V 22A POWERDI |
5.040 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 20A, 10V | 3V @ 250µA | 44nC @ 10V | ±20V | 2370pF @ 15V | - | 2.4W (Ta), 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |