Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 391/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Rohm Semiconductor |
SCT3022KL IS AN SIC (SILICON CAR |
2.100 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 95A (Tc) | 18V | 28.6mOhm @ 36A, 18V | 5.6V @ 18.2mA | 178nC @ 10V | +22V, -4V | 2879pF @ 800V | - | 427W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
4.986 |
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Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 650V | 118A (Tc) | 18V | 22.1mOhm @ 47A, 18V | 5.6V @ 23.5mA | 172nC @ 18V | +22V, -4V | 2884pF @ 500V | - | 427W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
3.942 |
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Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 1200V | 95A (Tc) | 18V | 28.6mOhm @ 36A, 18V | 5.6V @ 18.2mA | 178nC @ 18V | +22V, -4V | 2879pF @ 800V | - | 427W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
BSM400C12P3G202 IS A CHOPPER MOD |
4.500 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200V | 400A (Tc) | - | - | 5.6V @ 106.8mA | - | +22V, -4V | 17000pF @ 10V | - | 1570W (Tc) | 175°C (TJ) | Chassis Mount | Module | Module |
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Rohm Semiconductor |
BSM600C12P3G201 IS A CHOPPER MOD |
6.804 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200V | 600A (Tc) | - | - | 5.6V @ 182mA | - | +22V, -4V | 28000pF @ 10V | - | 2460W (Tc) | 175°C (TJ) | Chassis Mount | Module | Module |
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Nexperia |
MOSFET N-CH 60V 190MA TO236AB |
8.514 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 190mA (Ta) | 5V, 10V | 4.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.43nC @ 4.5V | ±20V | 20pF @ 10V | - | 265mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 60V 190MA TO236AB |
5.868 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 190mA (Ta) | 2.5V, 10V | 4.5Ohm @ 190mA, 10V | 1.5V @ 250µA | 1.4nC @ 10V | ±20V | 20pF @ 30V | - | 265mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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|
ON Semiconductor |
NFET SOT23 60V 115MA 7MO |
5.724 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 260mA (Ta) | 4.5V, 10V | 2.5Ohm @ 240mA, 10V | 2.5V @ 250µA | 0.81nC @ 5V | ±20V | 40pF @ 25V | - | 300mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
NFET SOT23 60V 115MA 7MO |
6.300 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 380mA (Ta) | 4.5V, 10V | 1.6Ohm @ 500mA, 10V | 2.3V @ 250µA | 0.7nC @ 4.5V | ±20V | 45pF @ 20V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CHANNEL 60V 210MA SC70 |
4.266 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 210mA (Ta) | 2.5V, 10V | 3.5Ohm @ 200mA, 10V | 1.5V @ 250µA | 0.7nC @ 10V | ±20V | 20pF @ 30V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 60V SOT23 |
7.614 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Ta) | 5V, 10V | 3Ohm @ 115mA, 10V | 2V @ 250µA | 0.87nC @ 10V | ±20V | 22pF @ 25V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.21A SOT23 |
6.408 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 210mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.82nC @ 10V | ±30V | 22pF @ 25V | - | 340mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 60V 265MA TO236AB |
2.700 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 265mA (Ta) | 2.5V, 10V | 3.5Ohm @ 200mA, 10V | 1.5V @ 250µA | 0.49nC @ 30V | ±20V | 20.2pF @ 30V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 60V 270MA TO236AB |
5.796 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 5V, 10V | 2.8Ohm @ 200mA, 10V | 2.1V @ 250µA | 1nC @ 10V | ±20V | 23.6pF @ 10V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 20V 210MA SOT-723 |
8.838 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 210mA (Ta) | 1.65V, 4.5V | 3.4Ohm @ 10mA, 4.5V | 1.3V @ 250µA | - | ±10V | 11pF @ 10V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
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Nexperia |
MOSFET N-CH 60V 300MA TO236AB |
4.860 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Tc) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±30V | 50pF @ 10V | - | 830mW (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 0.35A SOT23 |
4.086 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 350mA (Ta) | 2.5V, 10V | 2.8Ohm @ 250mA, 10V | 1.5V @ 250µA | 0.9nC @ 10V | ±20V | 23.2pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET BVDSS: 25V-30V SOT23 |
7.578 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFETN-CHAN 60V SOT23 |
4.896 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 210mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.821nC @ 10V | ±40V | 22pF @ 25V | - | 570mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
NFET SOT23 60V 115MA 7.5O |
4.068 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
BSS FAMILY SOT23 T&R 10K |
3.762 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 250µA | - | ±20V | 50pF @ 10V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.17A SOT23 |
6.534 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 5V | 7.5Ohm @ 50mA, 5V | 3V @ 250µA | 0.35nC @ 4.5V | ±20V | 26pF @ 25V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.38A SOT23 |
6.084 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 380mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 1mA | 0.3nC @ 4.5V | ±20V | 30pF @ 25V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 60V 300MA TO236AB |
7.938 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 1.6Ohm @ 500mA, 10V | 2.5V @ 250µA | 1.3nC @ 4.5V | ±20V | 55pF @ 25V | - | 350mW (Ta) | 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
NFET SOT23 100V 170MA 6.0 |
2.556 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET P-CH 20V 0.2A X2-DFN1006 |
6.138 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 4.5V | 5Ohm @ 100mA, 4.5V | 1V @ 250µA | - | ±10V | 175pF @ 15V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 50V SOT323 |
6.372 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 360mA (Ta) | 5V, 10V | 2Ohm @ 270mA, 10V | 1.5V @ 100µA | 1.2nC @ 10V | ±20V | 45.8pF @ 25V | - | 320mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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|
ON Semiconductor |
NFET SOT23 50V 200MA 3.5O |
8.118 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 2.75V, 5V | 3.5Ohm @ 200mA, 5V | 1.5V @ 1mA | - | ±20V | 50pF @ 25V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.2A CST3 |
5.364 |
|
U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12pF @ 10V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.38A SOT323 |
3.744 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 380mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 1mA | 0.3nC @ 4.5V | ±20V | 30pF @ 25V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |