Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 353/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 34A TO252 |
3.744 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 34A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28nC @ 10V | ±20V | 1680pF @ 25V | - | 104W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 35A TSDSON-8 |
8.064 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 35A (Tc) | 4.5V, 10V | 11.5mOhm @ 20A, 10V | 2V @ 250µA | 17nC @ 10V | ±20V | 1300pF @ 15V | - | 2.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 65A TDSON-8 |
3.330 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 65A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 26nC @ 10V | ±20V | 2100pF @ 15V | - | 2.5W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 150V 7.7A SC70-6L |
8.658 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 7.7A (Tc) | 6V, 10V | 177mOhm @ 3A, 10V | 3.5V @ 250µA | 8nC @ 10V | ±20V | 230pF @ 75V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Infineon Technologies |
MOSFET N-CH 30V 53A TDSON-8 |
3.384 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 53A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2.2V @ 250µA | 21nC @ 10V | ±20V | 1700pF @ 15V | - | 2.5W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 30V POWERDI3333-8 |
2.898 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 18.6mOhm @ 10A, 10V | 1.8V @ 250µA | 11.3nC @ 10V | ±25V | 580pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Nexperia |
MOSFET 2N-CH 40V MLFPAK |
3.526 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Tc) | 5V, 10V | 9mOhm @ 15A, 10V | 2.1V @ 1mA | 13.4nC @ 5V | ±10V | 1721pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Nexperia |
MOSFET N-CH 80V 26A LFPAK |
4.464 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 26A (Tc) | 5V | 31mOhm @ 5A, 10V | 2.1V @ 1mA | 13.5nC @ 5V | ±10V | 1804pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 6A SOT223 |
3.312 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 7W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Nexperia |
MOSFET N-CH 30V 70A LFPAK |
6.282 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 5V | 5.3mOhm @ 20A, 10V | 2.1V @ 1mA | 18nC @ 5V | ±10V | 2001pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Diodes Incorporated |
MOSFET N-CH 60V 13A POWERDI |
6.840 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 30A (Tc) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 2V @ 250µA | 41.3nC @ 10V | ±20V | 2090pF @ 30V | - | 2.2W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
4.266 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | ±20V | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 50A POWERPAK1212 |
8.316 |
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TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5.1mOhm @ 15A, 10V | 2.2V @ 250µA | 55nC @ 4.5V | ±20V | 4660pF @ 15V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
3.888 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 15A, 10V | 2.15V @ 1mA | 57nC @ 10V | ±20V | 3468pF @ 12V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 150V 2.8A POWER33 |
2.682 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 2.8A (Ta), 9.4A (Tc) | 6V, 10V | 134mOhm @ 2.8A, 10V | 4V @ 250µA | 5.9nC @ 10V | ±20V | 345pF @ 75V | - | 2.3W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Rohm Semiconductor |
MOSFET N-CHANNEL 30V 9.5A 8SOP |
2.430 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.5A (Ta) | 10V | 14.6mOhm @ 9.5A, 10V | 2.5V @ 1mA | 8.3nC @ 4.5V | ±20V | 680pF @ 15V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V TO252 |
3.598 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 13.3A (Ta), 57A (Tc) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | ±16V | 1925pF @ 30V | - | 2.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 26A PQFN |
3.942 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 26A (Ta), 40A (Tc) | 2.5V, 10V | 2.5mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78nC @ 4.5V | ±12V | 3620pF @ 10V | - | 2.7W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 23A DPAK |
8.406 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 4.5V, 10V | 52mOhm @ 10A, 10V | 2V @ 250µA | 35nC @ 10V | ±20V | 1024pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60V 13.5A |
3.834 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 13.5A (Ta), 80A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 3V @ 250µA | 41.3nC @ 10V | ±20V | 2090pF @ 30V | - | 2.2W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 60V 3.44A 8DSO |
8.082 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 3.44A (Ta) | 10V | 130mOhm @ 3.44A, 10V | 4V @ 1mA | 30nC @ 10V | ±20V | 875pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Central Semiconductor Corp |
MOSFET N-CH 60V 5.3A SOT-89 |
8.766 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 5.3A (Ta) | 4.5V, 10V | 41mOhm @ 5.3A, 10V | 3V @ 250µA | 8.8nC @ 5V | 20V | 920pF @ 30V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 100V 45A TDSON-8 |
7.326 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 8.5A (Ta), 45A (Tc) | 10V | 19.6mOhm @ 45A, 10V | 4V @ 42µA | 34nC @ 10V | ±20V | 2300pF @ 50V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 17.7A TDSON-8 |
3.474 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 17.7A (Ta), 100A (Tc) | 6V, 10V | 6mOhm @ 50A, 10V | 3.1V @ 150µA | 81nC @ 10V | ±25V | 6020pF @ 15V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 150V 1.2A SOT-223-4 |
6.714 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 1.2A (Ta), 3A (Tc) | 6V, 10V | 845mOhm @ 1.2A, 10V | 4V @ 250µA | 2nC @ 10V | ±20V | 73pF @ 75V | - | 2.3W (Ta), 10W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 100V 23A 1212-8 |
8.190 |
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ThunderFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 4.5V, 10V | 59mOhm @ 5A, 10V | 2.5V @ 250µA | 15nC @ 4.5V | ±20V | 1050pF @ 50V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Diodes Incorporated |
MOSFET N-CH 60V 14.2A |
7.974 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14.2A (Ta), 59A (Tc) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | ±16V | 1925pF @ 30V | - | 3.2W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 14.2A SO-8 |
3.544 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 14.2A (Tc) | 7.5V, 10V | 95mOhm @ 8A, 10V | 4V @ 250µA | 16nC @ 7.5V | ±20V | 740pF @ 100V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Rohm Semiconductor |
MOSFET N-CH 60V 6.5A SOP8 |
3.438 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Ta) | 4V, 10V | 37mOhm @ 6.5A, 10V | 2.5V @ 1mA | 16nC @ 5V | 20V | 900pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
7.290 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.2V @ 250µA | 56nC @ 10V | ±20V | 4400pF @ 15V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |