Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 344/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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STMicroelectronics |
MOSFET N-CH 600V 20A TO-247 |
2.862 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 290mOhm @ 10A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | 1500pF @ 25V | - | 192W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
300V/56A ULTRA JUNCTION X3-CLASS |
2.646 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 56A (Tc) | 10V | 27mOhm @ 28A, 10V | 4.5V @ 1.5mA | 56nC @ 10V | ±20V | 3.75nF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 80A TO263AA |
8.874 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 80A (Tc) | 10V | 16mOhm @ 40A, 10V | 4.5V @ 1.5mA | 83nC @ 10V | ±20V | 5430pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 52A TO247 |
6.012 |
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FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 52A (Tc) | 10V | 72mOhm @ 26A, 10V | 5V @ 250µA | 215nC @ 10V | ±20V | 8660pF @ 100V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 50A TO263-3 |
3.402 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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IXYS |
MOSFET N-CH 300V 40A TO-247AD |
5.580 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 40A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4V @ 4mA | 200nC @ 10V | ±20V | 4800pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 58A TO-247AD |
8.046 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 58A (Tc) | 10V | 40mOhm @ 29A, 10V | 4V @ 4mA | 220nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 69A HSOF-8 |
5.202 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 69A (Tc) | 10V | 33mOhm @ 28.9A, 10V | 4V @ 1.44mA | 110nC @ 10V | ±20V | 5000pF @ 400V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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IXYS |
MOSFET N-CH 300V 50A TO-247 |
2.880 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 50A (Tc) | 10V | 80mOhm @ 25A, 10V | 6.5V @ 4mA | 65nC @ 10V | ±20V | 3160pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 500V 30A TO-247 |
6.660 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 120mOhm @ 13A, 10V | 5V @ 250µA | 106nC @ 10V | ±30V | 3000pF @ 25V | - | 313W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 80A TO-247 |
6.156 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 80A (Tc) | 10V | 40mOhm @ 40A, 10V | 5.5V @ 4mA | 143nC @ 10V | ±30V | 8245pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 46A SUPER247 |
6.048 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 250µA | 380nC @ 10V | ±30V | 8110pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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IXYS |
MOSFET N-CH 200V 16A TO-247 |
5.580 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | - | 73mOhm @ 8A, 0V | - | 208nC @ 5V | ±20V | 5500pF @ 25V | Depletion Mode | 695W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 75A TO-247AD |
3.816 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 20mOhm @ 37.5A, 10V | 4V @ 4mA | 260nC @ 10V | ±20V | 4500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 500V 100A TO-264 |
8.172 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 100A (Tc) | 10V | 55mOhm @ 50A, 10V | 5V @ 250µA | 238nC @ 10V | ±30V | 12000pF @ 25V | - | 2500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3 | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 300V 52A TO-247AD |
7.578 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 52A (Tc) | 10V | 60mOhm @ 500mA, 10V | 4V @ 4mA | 150nC @ 10V | ±20V | 5300pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 180A PLUS247 |
3.330 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 180A (Tc) | 10V | 12.9mOhm @ 60A, 10V | 5V @ 8mA | 345nC @ 10V | ±20V | 28000pF @ 25V | - | 1390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 77.5A TO 247-3 |
5.742 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 77.5A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.5V @ 2.96mA | 290nC @ 10V | ±20V | 6530pF @ 10V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 15A TO-247AD |
7.452 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 15A (Tc) | 10V | 600mOhm @ 7.5A, 10V | 4.5V @ 4mA | 90nC @ 10V | ±20V | 4300pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 170A TO268HV |
5.004 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 170A (Tc) | 10V | 7.4mOhm @ 85A, 10V | 4.5V @ 4mA | 190nC @ 10V | ±20V | 13500pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET P-CH 600V 32A PLUS247 |
3.258 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 350mOhm @ 16A, 10V | 4V @ 1mA | 196nC @ 10V | ±20V | 11100pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET P-CH 100V 170A TO-264 |
3.942 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 12mOhm @ 500mA, 10V | 4V @ 1mA | 240nC @ 10V | ±20V | 12600pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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Littelfuse |
MOSFET SIC 1200V 39A TO247-3 |
3.852 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 39A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 95nC @ 20V | +22V, -6V | 1825pF @ 800V | - | 179W (Tc) | -55°C ~ 150°C | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 60A TO-247 |
3.204 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | ±20V | 6800pF @ 100V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 80A TO-264 |
4.428 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 80A (Tc) | 10V | 65mOhm @ 40A, 10V | 5V @ 8mA | 197nC @ 10V | ±30V | 12700pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 200V 90A TO-264AA |
4.554 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 23mOhm @ 45A, 10V | 4V @ 8mA | 380nC @ 10V | ±20V | 9000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 250V 168A SOT-227 |
3.618 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 168A (Tc) | 10V | 12.9mOhm @ 60A, 10V | 5V @ 8mA | 345nC @ 10V | ±20V | 28000pF @ 25V | - | 900W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Infineon Technologies |
MOSFET N-CH 650V 75A TO247-3 |
8.100 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215nC @ 10V | ±20V | 9900pF @ 400V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 150A SOT-227B |
7.866 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 150V | 150A (Tc) | 10V | 11mOhm @ 90A, 10V | 5V @ 4mA | 240nC @ 10V | ±20V | 7000pF @ 25V | - | 680W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
40V/660A TRENCHT4 PWR MOSFET SOT |
5.076 |
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TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 40V | 660A (Tc) | 10V | 0.85mOhm @ 100A, 10V | 4V @ 250µA | 860nC @ 10V | ±15V | 44000pF @ 25V | Current Sensing | 1040W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |