Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 33/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 60V 23A TDSON-8 |
142.566 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 23A (Ta), 100A (Tc) | 6V, 10V | 2.8mOhm @ 50A, 10V | 2.8V @ 50µA | 37nC @ 10V | ±20V | 2700pF @ 30V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 60V 16A TO-220 |
65.436 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Tc) | 10V, 5V | 90mOhm @ 8A, 10V | 2.5V @ 250µA | 10nC @ 5V | ±16V | 345pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 25A POWER56 |
90.804 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 25A (Ta), 49A (Tc) | 4.5V, 10V | 2.2mOhm @ 25A, 10V | 3V @ 250µA | 110nC @ 10V | ±20V | 7205pF @ 20V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 30V 15.2A POWER56 |
52.638 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 15.2A (Ta), 28A (Tc) | 4.5V, 10V | 6.8mOhm @ 15.2A, 10V | 3V @ 250µA | 130nC @ 10V | ±25V | 5915pF @ 15V | - | 2.5W (Ta), 73W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 30V 17A IPAK |
32.574 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Tc) | 5V, 10V | 50mOhm @ 8.5A, 10V | 2.2V @ 250µA | 6.5nC @ 5V | ±16V | 320pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 30V 100A PPAK SO-8 |
52.038 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1mOhm @ 20A, 10V | 2.2V @ 250µA | 220nC @ 10V | +20V, -16V | 11700pF @ 15V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 150V 4.5A POWER56 |
24.516 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 150V | 4.5A (Ta), 27A (Tc) | 6V, 10V | 47mOhm @ 4.5A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 2610pF @ 75V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (5x6), Power56 | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 80V 90A TO252-3 |
230.712 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 6V, 10V | 5.3mOhm @ 90A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4750pF @ 40V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 10A VSON-4 |
52.950 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 365mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 46W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 17A 8DFN |
113.556 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 17A (Ta), 85A (Tc) | 6V, 10V | 4.1mOhm @ 20A, 10V | 3.2V @ 250µA | 82nC @ 10V | ±20V | 3930pF @ 40V | - | 7.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Vishay Siliconix |
MOSFET N-CH 40V 10.5A 1212-8 |
58.524 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 10.5A (Ta) | 4.5V, 10V | 7.8mOhm @ 16.4A, 10V | 2.5V @ 250µA | 23nC @ 4.5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Infineon Technologies |
MOSFET TO263-3 |
28.524 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 150V 16A POWER33 |
29.796 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 4.6A (Ta), 16A (Tc) | 6V, 10V | 51mOhm @ 4.6A, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 905pF @ 75V | - | 2.3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
48.042 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 38A (Ta), 100A (Tc) | 3V, 8V | 1.5mOhm @ 35A, 8V | 1.5V @ 250µA | 36nC @ 4.5V | +10V, -8V | 5240pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 20V 14A 8-SOIC |
23.412 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 14A (Ta) | 4.5V, 10V | 4.5mOhm @ 21A, 10V | 1V @ 250µA (Min) | 32nC @ 4.5V | ±20V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 60V 50A TO-252 |
239.466 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 17A, 10V | 3V @ 250µA | 165nC @ 10V | ±20V | 4950pF @ 25V | - | 2.5W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 90A |
91.728 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 6V, 10V | 6.8mOhm @ 90A, 10V | 3.5V @ 90µA | 68nC @ 10V | ±20V | 4910pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 60V 100A D2PAK |
53.952 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4.4mOhm @ 25A, 10V | 4V @ 1mA | 70.8nC @ 10V | ±20V | 4426pF @ 30V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 30V 60A PPAK SO-8 |
101.784 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.6mOhm @ 25A, 10V | 2.3V @ 250µA | 413nC @ 10V | ±20V | 15660pF @ 15V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 10A 8-SOIC |
92.004 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | 1.8V, 4.5V | 7.5mOhm @ 14A, 4.5V | 900mV @ 600µA | 175nC @ 5V | ±8V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 20V 60A PPAK SO-8 |
69 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 4.5V, 10V | 1.9mOhm @ 25A, 10V | 2.3V @ 250µA | 400nC @ 10V | ±20V | 14300pF @ 10V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 34A 8DFN |
636.486 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 34A (Ta), 85A (Tc) | 6V, 10V | 3.3mOhm @ 20A, 10V | 3.3V @ 250µA | 86nC @ 10V | ±20V | 4646pF @ 40V | - | 7.4W (Ta), 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Nexperia |
MOSFET N-CH 60V 100A D2PAK |
54.312 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 5V | 4.4mOhm @ 25A, 10V | 2.1V @ 1mA | 65nC @ 5V | ±10V | 9710pF @ 25V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 15A PPAK SO-8 |
215.838 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 15A PPAK SO-8 |
165.204 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
42.162 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 38A (Ta), 100A (Tc) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 1.9V @ 250µA | 29nC @ 4.5V | +16V, -12V | 4100pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 10.3A DIRECTFET |
39.312 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | ±20V | 2210pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Texas Instruments |
MOSFET N-CH 40V 100A 8VSON |
60.426 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Ta) | 4.5V, 10V | 1.2mOhm @ 32A, 10V | 2.2V @ 250µA | 195nC @ 10V | ±20V | 13900pF @ 20V | - | 3.1W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 18A TO-220AB |
88.932 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1160pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 3.2A PPAK SO-8 |
171.396 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.2A (Ta) | 6V, 10V | 80mOhm @ 4A, 10V | 4.5V @ 250µA | 42nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |