Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 323/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET P-CHAN 40V TO-263 |
8.730 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 5.1mOhm @ 30A, 10V | 2.5V @ 250µA | 280nC @ 10V | ±20V | 14500pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET NCH 650V 12A TO263 |
8.712 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 720mOhm @ 6A, 10V | 4.5V @ 250µA | 48nC @ 10V | ±30V | 2150pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 30V 75A D2PAK |
5.760 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 3.4mOhm @ 25A, 10V | 4V @ 1mA | 75nC @ 10V | ±20V | 4951pF @ 25V | - | 255W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 20V 60A PPAK 8SO |
6.498 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 3V @ 250µA | 260nC @ 10V | ±20V | 9500pF @ 10V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 650V 5A DPAK |
5.094 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 5A (Tc) | 10V | 1.15Ohm @ 2.5A, 10V | 4V @ 250µA | 9nC @ 10V | ±25V | 270pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK |
8.406 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 800pF @ 25V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK |
4.806 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 800pF @ 25V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 400V 10.5A D2PAK |
5.382 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 10.5A (Tc) | 10V | 530mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | 1090pF @ 25V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A DPAK |
4.428 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
N-CHANNEL 600 V 0.29 OHM TYP. 12 |
4.266 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 660mOhm @ 2.75A, 10V | 4.75V @ 250µA | - | ±25V | - | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) HV | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 9A TO263 |
8.550 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 535mOhm @ 2.8A, 10V | 5V @ 1mA | 16.5nC @ 10V | ±20V | 540pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 7A TO263 |
6.894 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 620mOhm @ 2.4A, 10V | 5V @ 1mA | 14.5nC @ 10V | ±20V | 470pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 60V 35A DPAK |
4.158 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 35A (Tc) | 5V, 10V | 28mOhm @ 18A, 10V | 2.5V @ 250µA | 31nC @ 5V | ±20V | 1600pF @ 25V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 600V 7A LPT |
3.204 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 620mOhm @ 2.4A, 10V | 4V @ 1mA | 20nC @ 10V | ±20V | 390pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 30V 30A DPAK |
8.964 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 25mOhm @ 15A, 10V | 2.5V @ 250µA | 18nC @ 5V | ±20V | 830pF @ 25V | - | 50W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 80V PP SO-8 |
2.484 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 80V | 24.7A (Ta), 106A (Tc) | 7.5V, 10V | 3.55mOhm @ 15A, 10V | 3.5V @ 250µA | 94nC @ 10V | ±20V | 4150pF @ 40V | - | 5.4W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET N-CH 55V 75A D2PAK |
8.694 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 5V, 10V | 5.4mOhm @ 25A, 10V | 2V @ 1mA | 60nC @ 5V | ±15V | 7565pF @ 25V | - | 258W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 93A TO-263AB |
8.838 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 67nC @ 10V | ±20V | 2525pF @ 15V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 5A DPAK |
4.860 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 5A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 10nC @ 10V | ±25V | 315pF @ 100V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 620V 3.8A D2PAK |
7.038 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 3.8A (Tc) | 10V | 1.95Ohm @ 1.9A, 10V | 4.5V @ 50µA | 14nC @ 10V | ±30V | 450pF @ 50V | - | 70W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 120A H2PAK-2 |
8.946 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 5V, 10V | 2.2mOhm @ 60A, 10V | 1V @ 250µA (Min) | 181nC @ 10V | ±20V | 8130pF @ 20V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 6A TO-263AB |
6.876 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 6A (Ta), 32A (Tc) | 6V, 10V | 36mOhm @ 32A, 10V | 4V @ 250µA | 28nC @ 10V | ±20V | 1250pF @ 25V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 200V 21A D2PAK |
7.992 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 21A (Tc) | 5V, 10V | 140mOhm @ 10.5A, 10V | 2V @ 250µA | 35nC @ 5V | ±20V | 2200pF @ 25V | - | 3.13W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 30V 50A 8WPAK |
8.046 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 2.9mOhm @ 25A, 10V | 2.5V @ 1mA | 34nC @ 4.5V | ±20V | 5600pF @ 10V | - | 50W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK (3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 60V 21A TO-220F |
6.276 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 21A (Tc) | 5V, 10V | 25mOhm @ 21A, 10V | 2.5V @ 250µA | 30.2nC @ 10V | ±20V | 1470pF @ 25V | - | 26W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 150V 15A TO252 |
5.112 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 15A (Tc) | 6V, 10V | 95mOhm @ 15A, 10V | 2V @ 250µA (Min) | 25nC @ 10V | ±20V | 900pF @ 25V | - | 2.7W (Ta), 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 100A D2PAK |
6.912 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.1mOhm @ 25A, 10V | 2.15V @ 1mA | 117nC @ 10V | ±20V | 6810pF @ 15V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 80A DPAK |
4.590 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 6.5mOhm @ 40A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 2200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 26.5A SO8FL |
6.102 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 26.5A (Ta), 207A (Tc) | 4.5V, 10V | 1.3mOhm @ 25A, 10V | 2.2V @ 1mA | 84nC @ 10V | ±20V | 6000pF @ 15V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 40V 11A POWERFLAT |
7.272 |
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STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 40V | 11A (Tc) | 4.5V, 10V | 9.7mOhm @ 5.5A, 10V | 2.5V @ 250µA | 12.9nC @ 4.5V | ±20V | 1570pF @ 25V | - | 2.9W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |