Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 283/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-220AB |
9.792 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36nC @ 5V | ±16V | 1620pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO-220AB |
6.612 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 15mOhm @ 45A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3830pF @ 25V | - | 260W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK |
8.520 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1018pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 55A TO-220 |
8.892 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | 10V | 26mOhm @ 27.5A, 10V | 4V @ 250µA | 98nC @ 10V | ±25V | 2730pF @ 25V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 250V 10.5A TO-3P |
10.068 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 250V | 10.5A (Tc) | 10V | 620mOhm @ 5.25A, 10V | 5V @ 250µA | 38nC @ 10V | ±30V | 1180pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET P-CH 85V 24A TO-263 |
8.184 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 85V | 24A (Tc) | 10V | 65mOhm @ 12A, 10V | 4.5V @ 250µA | 41nC @ 10V | ±15V | 2090pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A TO-220SIS |
8.136 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 52A TO220FP |
21.192 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 52A (Tc) | 4V, 10V | 10mOhm @ 28A, 10V | 2V @ 250µA | 98nC @ 5V | ±16V | 3600pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 800V 10A |
14.784 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 10A (Tc) | 10V | 650mOhm @ 4A, 10V | 4.5V @ 800µA | 35nC @ 10V | ±20V | 1565pF @ 100V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 12A TO-220FP |
9.000 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | 4V @ 250µA | 19nC @ 10V | ±25V | 700pF @ 100V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 150V 45A TO-220 |
19.860 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 45A (Tc) | 10V | 40mOhm @ 22.5A, 10V | 4V @ 250µA | 94nC @ 10V | ±30V | 3030pF @ 25V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 800V 5.5A TO-220F |
11.364 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 2.5Ohm @ 2.75A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 1310pF @ 25V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 200V 25A TO-220AB |
16.284 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 25A (Tc) | 10V | 72.5mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 31A TO-220AB |
12.096 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1470pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 40A TO-220F |
10.092 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Tc) | 10V | 16mOhm @ 20A, 10V | 4V @ 250µA | 65nC @ 10V | ±25V | 2410pF @ 25V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 200V 21A TO220-3 |
18.408 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 21A (Tc) | 10V | 130mOhm @ 13.5A, 10V | 4V @ 1mA | - | ±20V | 1900pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO-220 |
6.228 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 250µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 100V 40A TO-220F |
21.468 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 8.5mOhm @ 40A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 2695pF @ 50V | - | 33.3W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO220SIS |
8.712 |
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π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Ta) | 10V | 1.3Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | ±30V | 2000pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 900V 6A TO-220F |
7.938 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 2.3Ohm @ 3A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1770pF @ 25V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
N-CHANNEL 900 V, 2.1 OHM TYP., 3 |
8.208 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 5V @ 100µA | - | ±30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |
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Infineon Technologies |
MOSFET N CH 60V 195A TO-220AB |
6.660 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.7V @ 250µA | 279nC @ 10V | ±20V | 10034pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 8A TO-220AB |
9.024 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | ±20V | 1100pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 12A I2PAK |
20.424 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 330mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | ±25V | 770pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 59A TO-220AB |
16.536 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 25mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | ±30V | 2450pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO220FP-3 |
7.320 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 5.2A, 10V | 4.5V @ 430µA | 25.5nC @ 10V | ±20V | 1190pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 75A TO-220AB |
18.228 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | ±16V | 5080pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-220AB |
17.832 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | 4V @ 150µA | 110nC @ 10V | ±20V | 4750pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 56A TO-220AB |
18.048 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | ±20V | 2000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 11A TO-220F |
18.804 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52nC @ 10V | ±30V | 1490pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |