Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 267/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO263-3 |
5.076 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 1.5mOhm @ 100A, 10V | 2V @ 200µA | 346nC @ 10V | ±20V | 28000pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
80V 200A 2.3MOHM TOLL |
6.786 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 80V | 200A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 130µA | 110nC @ 10V | ±20V | 7670pF @ 40V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 650V 19A TO263-3 |
5.634 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 19A (Tc) | 10V | 120mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | ±20V | 1500pF @ 400V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MOSFET N-CH 120V 100A TO263-3 |
8.262 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 240µA | 185nC @ 10V | ±20V | 11570pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MOSFET N-CH 60V 180A TO263-7 |
7.326 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | ±20V | 23000pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
100V 150A 3.5MOHM TOLL |
4.590 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 150A (Tc) | 6V, 10V | 3.5mOhm @ 75A, 10V | 3.8V @ 110µA | 87nC @ 10V | ±20V | 6110pF @ 50V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7 |
6.714 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 190A (Tc) | 4.5V, 10V | 3.9mOhm @ 110A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11490pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A D2PAK |
8.676 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 8HSOF |
5.418 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 80V | 240A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 160µA | 130nC @ 10V | ±20V | 9264pF @ 40V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 600V 30A TO263 |
5.976 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96nC @ 10V | ±20V | 2127pF @ 100V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO263-7 |
6.948 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 180A (Tc) | 10V | 2.2mOhm @ 100A, 10V | 4V @ 220µA | 167nC @ 10V | ±20V | 11550pF @ 25V | - | 277W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 80V 120A TO263-3 |
3.780 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.5V @ 270µA | 206nC @ 10V | ±20V | 14200pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 375A DIRECTFET |
6.570 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Ta), 114A (Tc) | 10V | 4.4mOhm @ 68A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5660pF @ 25V | - | 3.3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 150V 105A TO263-3 |
4.752 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 105A (Tc) | 10V | 8.3mOhm @ 100A, 10V | 4.9V @ 134µA | 45nC @ 10V | ±20V | 210pF @ 75V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V DIRECTFET L8 |
2.646 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 33A (Ta), 375A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 12320pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 650V 22A TO263-3 |
8.352 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1819pF @ 400V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO263-3 |
4.230 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 2.7mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | ±20V | 14800pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 120V 120A TO263-3 |
6.750 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 120A (Tc) | 10V | 3.8mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | ±20V | 13800pF @ 60V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 545A AUTO |
8.874 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 57A (Ta), 545A (Tc) | 10V | 0.6mOhm @ 195A, 10V | 3.9V @ 250µA | 562nC @ 10V | 40V | 17890pF @ 25V | - | 3.8W (Ta), 340W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH TO263-7 |
3.708 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 2.5mOhm @ 100A, 10V | 3.5V @ 275µA | 200nC @ 10V | ±20V | 14600pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 650V 31.2A TO263 |
3.006 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 180A TO263-7 |
6.876 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | ±20V | 14800pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 600V 25A TO263 |
5.112 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | ±20V | 2500pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
HIGH POWER_NEW |
7.794 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 105mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | ±20V | 1670pF @ 400V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 650V 38A TO263 |
2.358 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | ±20V | 2780pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 130A TO263-7 |
3.960 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | 8V, 10V | 6.5mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | ±20V | 7300pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 150V 120A TO263-3 |
7.614 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 120A (Tc) | 8V, 10V | 4.8mOhm @ 60A, 10V | 4.6V @ 264µA | 100nC @ 10V | ±20V | 7800pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 120A TO263-3 |
3.726 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 180A (Tc) | 6V, 10V | 1.5mOhm @ 100A, 10V | 3.8V @ 279µA | 222nC @ 10V | ±20V | 16900pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 200V 84A D2PAK |
6.696 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 84A (Tc) | 10V | 11.7mOhm @ 84A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 6650pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 120V 8HSOF |
7.272 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 300A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.8V @ 275µA | 231nC @ 10V | ±20V | 16250pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |