Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 250/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix |
MOSFET N-CH 60V 50A |
5.058 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.5V @ 250µA | 72nC @ 10V | ±20V | 3065pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
STMicroelectronics |
N-CHANNEL 600 V, 0.115 OHM TYP., |
6.552 |
|
MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 140mOhm @ 10.5A, 10V | 5V @ 250µA | 43nC @ 10V | ±25V | 1870pF @ 100V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 200V 70A LPTS |
4.464 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 70A (Tc) | 10V | 42.7mOhm @ 35A, 10V | 5V @ 1mA | 125nC @ 10V | ±30V | 6900pF @ 25V | - | 1.56W (Ta), 40W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 650V 35A D2PAK |
7.092 |
|
FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 110mOhm @ 17.5A, 10V | 5V @ 3.5mA | 145nC @ 10V | ±20V | 4895pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
STMicroelectronics |
N-CHANNEL 650 V, 0.124 OHM TYP., |
6.732 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 154mOhm @ 10A, 10V | 4V @ 250µA | 41.5nC @ 10V | ±25V | 1790pF @ 100V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
|
|
|
ON Semiconductor |
MOSFET P-CH 75V 100A SMP-FD |
2.718 |
|
- | P-Channel | MOSFET (Metal Oxide) | 75V | 100A (Ta) | 4V, 10V | 8mOhm @ 50A, 10V | - | 280nC @ 10V | ±20V | 13400pF @ 20V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 24V 240A TO-262 |
6.852 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 240A (Tc) | 10V | 1.3mOhm @ 195A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 7630pF @ 19V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Wide | TO-262-3 Wide Leads |
|
|
|
ON Semiconductor |
T6 40V MOSFET |
8.784 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | 8400pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
STMicroelectronics |
N-CHANNEL 600 V, 105 MOHM TYP., |
6.300 |
|
MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4.75V @ 250µA | 33.4nC @ 10V | ±25V | 1515pF @ 100V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TOLL (HV) | 8-PowerSFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 500V 22A TO-3PN |
14.274 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 260mOhm @ 11A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | 3390pF @ 25V | - | 388W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 80V 110A TO263 |
7.074 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 110A (Tc) | 10V | 1.8mOhm @ 80A, 10V | 4.5V @ 250µA | 253nC @ 10V | ±20V | 14600pF @ 25V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 15A POWERPAK8X8 |
6.084 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 266mOhm @ 7A, 10V | 4V @ 250µA | 84nC @ 10V | ±30V | 1449pF @ 100V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
|
|
|
STMicroelectronics |
MOSFET N-CH 600V 22A D2PAK |
4.572 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 36nC @ 10V | ±25V | 1440pF @ 100V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
T8 60V MOSFET |
2.268 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 35A (Ta), 250A (Tc) | 4.5V, 10V | 1.3mOhm @ 50A, 10V | 2V @ 250µA | 89nC @ 10V | ±20V | 6680pF @ 30V | - | 3.3W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 104A TO220AB |
21.432 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 104A (Tc) | 10V | 11mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5270pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A 5DFN |
2.358 |
|
DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 98mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 240W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
|
|
|
STMicroelectronics |
MOSFET N-CH 800V 12A D2PAK |
5.490 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 450mOhm @ 6A, 10V | 5V @ 100µA | 29nC @ 10V | ±30V | 870pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
STMicroelectronics |
MOSFET N-CH 60V 180A H2PAK-6 |
8.496 |
|
DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 2.4mOhm @ 60A, 10V | 4V @ 250µA | 183nC @ 10V | ±20V | 11800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
EPC |
GANFET TRANS 40V 2.7A BUMPED DIE |
4.572 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 2.7A (Ta) | 5V | 110mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | +6V, -4V | 52pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
IXYS |
MOSFET P-CH 150V 44A TO-263 |
6.498 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 150V | 44A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 250µA | 175nC @ 10V | ±15V | 13400pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
STMicroelectronics |
MOSFET N-CH 550V 20A D2PAK |
6.210 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 550V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 250µA | 56nC @ 10V | ±30V | 1480pF @ 25V | - | 192W (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 12A D2PAK |
3.454 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Ta) | 10V | 9mOhm @ 80A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 6000pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 195A D2PAK |
7.368 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | ±20V | 13660pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 195A TO220AB |
6.780 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | ±20V | 14240pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
EPC |
GANFET TRANS 65V 2.7A BUMPED DIE |
3.960 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 65V | 2.7A (Ta) | 5V | 130mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | +6V, -4V | 52pF @ 32.5V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO220SIS |
8.964 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V HV POWERFLAT |
5.832 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 299mOhm @ 6A, 10V | 5V @ 250µA | 31nC @ 10V | ±25V | 1250pF @ 100V | - | 3W (Ta), 90W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 550V 23A TO-247 |
7.506 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | ±20V | 2540pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Texas Instruments |
MOSFET N-CH 80V 200A DDPAK-3 |
7.380 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 200A (Ta) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.2V @ 250µA | 156nC @ 10V | ±20V | 12200pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
|
|
|
ON Semiconductor |
SUPERFET3 650V D2PAK PKG |
7.668 |
|
SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 81nC @ 10V | ±30V | 3410pF @ 400V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |