Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 192/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
MOSFET P-CH 30V 2.6A SOT-23-6 |
27.774 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 150mOhm @ 1.6A, 10V | 1V @ 250µA | 10.2nC @ 10V | ±20V | 330pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 30V 11A TO252-3L |
8.388 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 7.5mOhm @ 11.6A, 10V | 2.3V @ 250µA | 27.6nC @ 10V | ±20V | 1289pF @ 15V | - | 1.68W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Nexperia |
MOSFET N-CH 55V 38A DPAK |
45.546 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 38A (Tc) | 10V | 30mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 1152pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 200V 3A CPT3 |
23.802 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 3A (Tc) | 10V | 870mOhm @ 1.5A, 10V | 5.2V @ 1mA | 6.7nC @ 10V | ±30V | 270pF @ 25V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Diodes Incorporated |
MOSFET NCH 60V 55A POWERDI |
26.640 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 4.5V, 10V | 23mOhm @ 12A, 10V | 3V @ 250µA | 19.7nC @ 10V | ±20V | 1016pF @ 30V | - | 1.6W (Ta), 53W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
|
Diodes Incorporated |
MOSFET NCH 60V 180MA SOT23 |
7.236 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 180mA (Ta) | 5V | 5Ohm @ 115mA, 10V | 2V @ 250µA | - | ±20V | 23pF @ 25V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 30V 0.25A EMT3 |
3.006 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 250mA (Ta) | 4V, 10V | 1.4Ohm @ 250mA, 10V | 2.5V @ 1mA | - | ±20V | 30pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3F (SOT-416FL) | SC-89, SOT-490 |
|
|
|
Diodes Incorporated |
MOSFET 41V 60V SOT23 |
4.158 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 250µA | - | ±20V | 50pF @ 10V | - | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 12V 6A TSMT8 |
336.810 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.5V, 4.5V | 23mOhm @ 6A, 4.5V | 1V @ 1mA | 34nC @ 4.5V | ±10V | 2800pF @ 6V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
|
|
|
Toshiba Semiconductor and Storage |
X34 PB-F CST3 FET (LF) TRANSISTO |
2.322 |
|
π-MOSIV | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 9.3pF @ 3V | - | 100mW (Ta) | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA CST3C |
2.070 |
|
U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 500mW (Ta) | 150°C | Surface Mount | CST3C | SC-101, SOT-883 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 60V 0.25A UMT3 |
4.860 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 2.5V, 10V | 2.4Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15pF @ 25V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
|
|
|
Nexperia |
MOSFET N-CH 55V 43A DPAK |
50.202 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 43A (Tc) | 10V | 25mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 1310pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 25V 16.5A 8-SOIC |
23.730 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 16.5A (Tc) | 2.5V, 10V | 10mOhm @ 10A, 10V | 1.5V @ 250µA | 34nC @ 10V | ±12V | 1145pF @ 10V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Comchip Technology |
MOSFET P-CH 50V 0.13A SOT-23 |
5.112 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 130mA (Ta) | 5V | 10Ohm @ 100mA, 5V | 2V @ 1mA | - | ±20V | 30pF @ 5V | - | 225mW (Ta) | 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Comchip Technology |
MOSFET N-CH 60V 0.25A SOT23 |
4.842 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 4.5V, 10V | 3Ohm @ 250mA, 10V | 2.5V @ 250µA | 1nC @ 10V | - | 25pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
MOSFET P-CH 60V 12A DPAK |
25.758 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 12A (Ta) | 10V | 180mOhm @ 6A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 750pF @ 25V | - | 55W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 8.3A SO-8FL |
231.540 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta), 57A (Tc) | 4.5V, 10V | 7mOhm @ 30A, 10V | 2.5V @ 250µA | 17nC @ 4.5V | ±20V | 1436pF @ 12V | - | 870mW (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
Nexperia |
MOSFET N-CH 55V 44A DPAK |
26.646 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 44A (Tc) | 10V | 19mOhm @ 12A, 10V | 2.8V @ 1mA | 33.8nC @ 10V | ±16V | 1950pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 65A DPAK |
100.038 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | 1030pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 20V 0.1A VML0806 |
5.580 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.8Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±10V | 15pF @ 10V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | VML0806 | 3-SMD, No Lead |
|
|
|
Diodes Incorporated |
MOSFET N-CH 30V 7.1A 8-SOIC |
2.268 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.1A (Ta) | 2.5V, 10V | 30mOhm @ 7.1A, 10V | 1.2V @ 250µA | - | ±12V | 555pF @ 5V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Nexperia |
MOSFET N-CH 25V 100A LFPAK |
47.286 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 3.15mOhm @ 25A, 10V | 1.95V @ 1mA | 33nC @ 10V | ±20V | 2083pF @ 12V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A CST3 |
7.722 |
|
U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 20V 100MA CST3 |
3.438 |
|
π-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4V | 8Ohm @ 50mA, 4V | 1V @ 1mA | - | ±10V | 12.2pF @ 3V | - | 100mW (Ta) | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 60V 250MA EMT3F |
4.194 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 10V | 2.4Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15pF @ 25V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | EMT3F (SOT-416FL) | SC-89, SOT-490 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 300MA SC70-3 |
6.678 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 50pF @ 25V | - | 200mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
|
|
|
Micro Commercial Co |
N-CHANNEL MOSFET, SOT-523 PACKAG |
6.030 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 4V, 10V | 8Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13pF @ 5V | - | 150mW (Ta) | -55°C ~ 150°C (TA) | Surface Mount | SOT-523 | SOT-523 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 27A PQFN5X6 |
32.262 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 50A (Tc) | 4.5V, 10V | 2.95mOhm @ 20A, 10V | 2.2V @ 50µA | 59nC @ 10V | ±20V | 3610pF @ 10V | - | 3.6W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 15A PQFN56 |
148.512 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 34A (Tc) | 4.5V, 10V | 8.5mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | ±20V | 1210pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |