Transistor - Bipolare (BJT) - Singolo

Produttore

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Serie

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Tipo di transistor

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Corrente - Collettore (Ic) (Max)

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Tensione - Guasto Collettore Emettitore (Max)

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Vce Saturazione (Max) @ Ib, Ic

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Corrente - Taglio collettore (Max)

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Guadagno di corrente CC (hFE) (Min) @ Ic, Vce

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Potenza - Max

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Frequenza - Transizione

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Temperatura di esercizio

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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CategoriaSemiconduttori / Transistor / Transistor - Bipolare (BJT) - Singolo

Record 13.715

Pagina 425/458

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di transistor	Corrente - Collettore (Ic) (Max)	Tensione - Guasto Collettore Emettitore (Max)	Vce Saturazione (Max) @ Ib, Ic	Corrente - Taglio collettore (Max)	Guadagno di corrente CC (hFE) (Min) @ Ic, Vce	Potenza - Max	Frequenza - Transizione	Temperatura di esercizio	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore
2SA1931,NSEIKIQ(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3	8.514	-	PNP	5A	50V	400mV @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 1V	2W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1931,Q(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3	4.284	-	PNP	5A	50V	400mV @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 1V	2W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1931,SINFQ(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3	4.086	-	PNP	5A	50V	400mV @ 200mA, 2A	1µA (ICBO)	100 @ 1A, 1V	2W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SA1972,F(J	Toshiba Semiconductor and Storage	TRANS PNP 500MA 400V TO226-3	6.192	-	PNP	500mA	400V	1V @ 10mA, 100mA	10µA (ICBO)	140 @ 20mA, 5V	900mW	35MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1972,T6WNLF(J	Toshiba Semiconductor and Storage	TRANS PNP 500MA 400V TO226-3	2.268	-	PNP	500mA	400V	1V @ 10mA, 100mA	10µA (ICBO)	140 @ 20mA, 5V	900mW	35MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-O(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	5.886	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y(JVC1,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	5.940	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y(T6JVC1,FM	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	5.094	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y(T6ONK1,FM	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	4.608	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y(T6SHRP,FM	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	4.842	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	4.626	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y,F(J	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	3.240	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y,ONK-1F(J	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	2.268	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA949-Y,ONK-1F(M	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3	3.078	-	PNP	50mA	150V	800mV @ 1mA, 10A	100nA (ICBO)	70 @ 10mA, 5V	800mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA965-O(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	8.640	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-O,F(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	7.236	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y(F,M)	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	2.916	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y(T6CANO,FM	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	5.832	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y,F(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	2.592	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y,SWFF(M	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	4.698	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y,T6F(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	7.128	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SA965-Y,T6KOJPF(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3	2.502	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SB1375,CLARIONF(M	Toshiba Semiconductor and Storage	TRANS PNP 3A 60V TO220-3	3.510	-	PNP	3A	60V	1.5V @ 200mA, 2A	10µA (ICBO)	100 @ 500mA, 5V	2W	9MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SB1457(T6CANO,F,M	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	5.292	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457(T6CNO,A,F)	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	5.904	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457(T6DW,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	8.010	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	6.786	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457,T6TOTOF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	3.726	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1457,T6YMEF(M	Toshiba Semiconductor and Storage	TRANS PNP 2A 100V TO226-3	7.560	-	PNP	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1481(TOJS,Q,M)	Toshiba Semiconductor and Storage	TRANS PNP 4A 100V TO220-3	6.642	-	PNP	4A	100V	1.5V @ 6mA, 3A	2µA (ICBO)	2000 @ 3A, 2V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS

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