PMIC - Gate driver
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / CI di gestione dell'alimentazione / PMIC - Gate driver
Record 5.436
Pagina 77/182
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Configurazione guidata | Tipo di canale | Numero di driver | Tipo di porta | Tensione - Alimentazione | Tensione logica - VIL, VIH | Corrente - Uscita di picco (Source, Sink) | Tipo di ingresso | High Side Voltage - Max (Bootstrap) | Tempo di salita / discesa (tipico) | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
IC DRIVER HIGH SIDE 600V 8SOIC |
6.426 |
|
Automotive, AEC-Q100 | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | - | 500mA, 500mA | Non-Inverting | 600V | 80ns, 80ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Infineon Technologies |
IC DRIVER HIGH SIDE 600V 8SOIC |
2.070 |
|
Automotive, AEC-Q100 | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | - | 500mA, 500mA | Non-Inverting | 600V | 80ns, 80ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Infineon Technologies |
IC MOSFET IGBT |
2.862 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 700V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8DFN |
2.304 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8DFN |
4.248 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8DFN |
8.892 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8DFN |
8.262 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8DFN |
6.444 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8DFN |
4.446 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
|
Diodes Incorporated |
HV GATE DRIVER SO-8 |
3.348 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 1.4A, 1.8A | Non-Inverting | 600V | 40ns, 20ns | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Infineon Technologies |
IC DUAL MOSFET IGBT 8-DIP |
6.138 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
|
STMicroelectronics |
IC DRIVER HALF BRDG W/OSC 8-SOIC |
21.267 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 16.6V | - | 170mA, 270mA | RC Input Circuit | 600V | - | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8DIP |
3.006 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
|
|
|
Microchip Technology |
IC MOSFET DVR 1A HS INV 8SOIC |
7.560 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Microchip Technology |
IC MOSFET DVR 1A HS INV 8SOIC |
2.970 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8DFN |
3.744 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8DFN |
3.510 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
|
Microchip Technology |
IC MOSFET DVR 1A HS N-INV 8SOIC |
3.852 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Microchip Technology |
IC MOSFET DVR 1A HS N-INV 8SOIC |
2.628 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Microchip Technology |
IC MOSFET DVR 1A HS INV 8SOIC |
3.186 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Microchip Technology |
IC MOSFET DVR 1A HS INV 8SOIC |
8.316 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 1A, 1A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8DFN |
5.256 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8DFN |
8.136 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
|
Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC BUCK 8-QFN |
2.556 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.5V, 2V | 2A, 2A | Non-Inverting | 33V | 8ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | 8-QFN (3x3) |
|
|
|
Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC BUCK 8DFN |
2.070 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.5V, 2V | 2A, 2A | Non-Inverting | 33V | 8ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-DFN-EP (2x2) |
|
|
|
Monolithic Power Systems Inc. |
IC GATE DRIVER |
5.616 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 18V | 1V, 2.4V | 2.5A, 2.5A | Non-Inverting | 100V | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
|
Monolithic Power Systems Inc. |
100V, 2.5A, HIGH FREQUENCY, HALF |
8.586 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 18V | 1V, 2.4V | 2.5A, 2.5A | Non-Inverting | 120V | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOICE |
|
|
|
Microchip Technology |
IC MOSFET DRIVER 6A NONINV 8-MLF |
8.982 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 20V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 12ns, 13ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad, 8-MLF® | 8-MLF® (2x2) |
|
|
|
Microchip Technology |
IC DRIVER MOSFET 6A INVERT 8SOIC |
2.394 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 20V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 12ns, 13ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
|
Infineon Technologies |
IC HALF BRIDGE DRIVER 14-SOIC |
4.554 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |