PMIC - Gate driver
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CategoriaSemiconduttori / CI di gestione dell'alimentazione / PMIC - Gate driver
Record 5.436
Pagina 168/182
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Configurazione guidata | Tipo di canale | Numero di driver | Tipo di porta | Tensione - Alimentazione | Tensione logica - VIL, VIH | Corrente - Uscita di picco (Source, Sink) | Tipo di ingresso | High Side Voltage - Max (Bootstrap) | Tempo di salita / discesa (tipico) | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
7.056 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 3.7V, 7.93V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 10TDFN |
4.986 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 10TDFN |
8.406 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
7.020 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
7.884 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
|
|
|
Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 10TDFN |
3.078 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 3.7V, 7.93V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
|
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 10TDFN |
8.586 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 3.7V, 7.93V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
|
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
6.480 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 3.7V, 7.93V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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|
Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
6.102 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
|
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|
Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 10TDFN |
6.300 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
|
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|
Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 10TDFN |
5.922 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
|
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
5.112 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
|
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|
Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
5.508 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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|
Infineon Technologies |
IC MOSFET DRIVER |
6.606 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Infineon Technologies |
IC MOSFET DRIVER |
2.736 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Infineon Technologies |
IC MOSFET DRIVER |
3.636 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET DRIVER |
3.564 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET DRIVER |
6.390 |
|
- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-VFQFN Exposed Pad | 28-MLPQ (5x5) |
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ON Semiconductor |
IC GATE DVR HIGH SIDE 8-SOIC |
6.210 |
|
- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 25ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR HI/LOW SIDE 8-SOIC |
7.470 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 22V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC GATE DVR HIGH SIDE 8-SOIC |
2.628 |
|
- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 25ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR HI/LOW SIDE 8-SOIC |
4.410 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 22V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Infineon Technologies |
IC GATE DRIVER 5V 10DFN |
8.532 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.8V, 1V | 2A, 2A | Non-Inverting | 35V | 10ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Infineon Technologies |
IC MOSFET DRVR N-CH DUAL 16QFN |
3.400 |
|
- | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.7V, 1.3V | - | Non-Inverting | - | 15ns, 12ns | 0°C ~ 150°C (TJ) | Surface Mount | 16-VFQFN Exposed Pad | 16-QFN (3x3) |
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Infineon Technologies |
IC DRVR IGBT/MOSFET 8SOIC |
5.634 |
|
Automotive, AEC-Q100 | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.4V ~ 6.5V | - | 500mA, 500mA | Inverting | 150V | 200ns, 200ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRVR BRIDGE 3-PHASE 44PLCC |
3.204 |
|
Automotive, AEC-Q100 | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel, P-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
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Infineon Technologies |
IC DRVR IGBT/MOSFET 20SOIC |
4.266 |
|
Automotive, AEC-Q100 | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel, P-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
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Infineon Technologies |
IC DRVR LSOW SIDE DUAL 8SOIC |
8.514 |
|
Automotive, AEC-Q100 | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.8V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting | - | 15ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET GATE DVR DUAL 8-SOIC |
2.736 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 13.2V | 1V, 2V | - | Non-Inverting | 30V | 16ns, 15ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET GATE DVR DUAL 8-DFN |
5.598 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 13.2V | 1V, 2V | - | Non-Inverting | 30V | 16ns, 15ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-DFN (2x2) |