Memoria
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CategoriaSemiconduttori / Circuiti integrati di memoria / Memoria
Record 46.590
Pagina 90/1553
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di memoria | Formato memoria | Tecnologia | Dimensione della memoria | Interfaccia di memoria | Frequenza di clock | Tempo di ciclo di scrittura - Parola, pagina | Tempo di accesso | Tensione - Alimentazione | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
IC FLASH 64M PARALLEL 48TFBGA |
10.020 |
|
SST38 | Non-Volatile | FLASH | FLASH | 64Mb (4M x 16) | Parallel | - | 10µs | 70ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
|
|
Microchip Technology |
IC FLASH 64M PARALLEL 48TSOP |
11.732 |
|
SST38 | Non-Volatile | FLASH | FLASH | 64Mb (4M x 16) | Parallel | - | 10µs | 90ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.173", 4.40mm Width) | 48-TSOP |
|
|
Microchip Technology |
IC FLASH 64M PARALLEL 48TSOP |
6.936 |
|
SST38 | Non-Volatile | FLASH | FLASH | 64Mb (4M x 16) | Parallel | - | 10µs | 90ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
|
|
Microchip Technology |
IC EEPROM 64K PARALLEL 28SOIC |
8.478 |
|
- | Non-Volatile | EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
GigaDevice Semiconductor (HK) Limited |
NOR FLASH |
7.884 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O, QPI, DTR | 200MHz | - | - | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
|
|
Toshiba Memory America, Inc. |
4GB SLC NAND 24NM BGA 9X11 (EEPR |
7.488 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-BGA | 63-BGA (9x11) |
|
|
Toshiba Memory America, Inc. |
IC FLASH 4G PARALLEL 48TSOP I |
6.828 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
Cypress Semiconductor |
IC FLASH 128M PARALLEL 64FBGA |
6.948 |
|
GL-P | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | Parallel | - | 110ns | 110ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
|
|
Cypress Semiconductor |
IC FLASH 128M PARALLEL 64FBGA |
7.692 |
|
GL-P | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | Parallel | - | 90ns | 90ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
|
|
Cypress Semiconductor |
IC FLASH 256M SPI 133MHZ 16SOIC |
23.604 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
Microchip Technology |
IC EEPROM 64K PARALLEL 28SOIC |
6.318 |
|
- | Non-Volatile | EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 10ms | 70ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
Cypress Semiconductor |
IC SRAM 512K PARALLEL 44TSOP II |
12.768 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 512Kb (32K x 16) | Parallel | - | 10ns | 10ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
Cypress Semiconductor |
IC SRAM 512K PARALLEL 44TSOP II |
546 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 512Kb (32K x 16) | Parallel | - | 15ns | 15ns | 3V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
Cypress Semiconductor |
IC SRAM 512K PARALLEL 44TSOP II |
6.084 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 512Kb (32K x 16) | Parallel | - | 15ns | 15ns | 2.5V ~ 2.7V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
Alliance Memory, Inc. |
IC DRAM 1G PARALLEL 96FBGA |
6.600 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 1Gb (64M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x13) |
|
|
Cypress Semiconductor |
IC FLASH 256M PARALLEL 56TSOP |
21.276 |
|
GL-P | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | Parallel | - | 90ns | 90ns | 3V ~ 3.6V | 0°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
|
|
Microchip Technology |
IC FLASH 64M PARALLEL 48TFBGA |
1.431 |
|
SST38 | Non-Volatile | FLASH | FLASH | 64Mb (4M x 16) | Parallel | - | 10µs | 90ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
|
|
Alliance Memory, Inc. |
IC SRAM 8M PARALLEL 48FPBGA |
6.948 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 55ns | 55ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-FPBGA (10x8) |
|
|
Micron Technology Inc. |
IC FLASH 1G SPI |
14.814 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 1Gb (1G x 1) | SPI | - | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-TBGA (6x8) |
|
|
Winbond Electronics |
IC DRAM 1G PARALLEL 134VFBGA |
6.192 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 1Gb (32M x 32) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 134-VFBGA | 134-VFBGA (10x11.5) |
|
|
Micron Technology Inc. |
IC FLASH 512M PARALLEL 64LBGA |
19.848 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8, 32M x 16) | Parallel | - | 60ns | 95ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-LBGA (11x13) |
|
|
Cypress Semiconductor |
IC FLASH 512M SPI 133MHZ |
21.276 |
|
FS-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI | 133MHz | - | - | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |
|
|
Microchip Technology |
IC EEPROM 64K PARALLEL 28TSOP |
8.700 |
|
- | Non-Volatile | EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
|
|
Alliance Memory, Inc. |
IC DRAM 256M PARALLEL 54FBGA |
8.544 |
|
- | Volatile | DRAM | SDRAM - Mobile SDRAM | 256Mb (16M x 16) | Parallel | 166MHz | - | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 54-VFBGA | 54-FBGA (8x8) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC FLASH 2G PARALLEL 48TSOP |
7.380 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 60VFBGA |
21.204 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 5.0ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 60-VFBGA | 60-VFBGA (8x9) |
|
|
GigaDevice Semiconductor (HK) Limited |
NOR FLASH |
6.684 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O, QPI, DTR | 200MHz | - | - | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
|
|
Alliance Memory, Inc. |
IC DRAM 512M PARALLEL 54FBGA |
8.232 |
|
- | Volatile | DRAM | SDRAM - Mobile SDRAM | 512Mb (32M x 16) | Parallel | 166MHz | - | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TJ) | Surface Mount | 54-VFBGA | 54-FBGA (8x8) |
|
|
Alliance Memory, Inc. |
IC DRAM 256M PARALLEL 90FBGA |
6.768 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 166MHz | 15ns | 5.5ns | 1.14V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-FBGA (8x13) |
|
|
Alliance Memory, Inc. |
IC DRAM 1G 32MX32 LPDDR2 134-BGA |
8.802 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 1Gb (32M x 32) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | 134-FBGA (10x11.5) |