Memoria
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CategoriaSemiconduttori / Circuiti integrati di memoria / Memoria
Record 46.590
Pagina 488/1553
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di memoria | Formato memoria | Tecnologia | Dimensione della memoria | Interfaccia di memoria | Frequenza di clock | Tempo di ciclo di scrittura - Parola, pagina | Tempo di accesso | Tensione - Alimentazione | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micron Technology Inc. |
IC FLASH 4G PARALLEL FBGA |
5.634 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (256M x 16) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA |
|
|
|
Micron Technology Inc. |
IC FLASH 4G PARALLEL FBGA |
251 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (256M x 16) | Parallel | - | - | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
|
Micron Technology Inc. |
IC FLASH 4G PARALLEL 63VFBGA |
3.852 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA |
|
|
|
Micron Technology Inc. |
IC FLASH 4G PARALLEL 63VFBGA |
3.870 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (256M x 16) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA |
|
|
|
Micron Technology Inc. |
IC FLASH 4G PARALLEL 63VFBGA |
6.678 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (256M x 16) | Parallel | - | - | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
|
Micron Technology Inc. |
IC FLASH 4G PARALLEL FBGA |
7.866 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-VFBGA |
|
|
|
Micron Technology Inc. |
IC FLASH 4G PARALLEL 48TSOP |
8.964 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (256M x 16) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5M PARALLEL 100LQFP |
7.938 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 133MHz | - | 6.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
|
|
|
Micron Technology Inc. |
MODULE EMMC 4GB 100TBGA |
4.140 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 32Gb (4G x 8) | MMC | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-TBGA | 100-TBGA (14x18) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 84WBGA |
8.856 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-WBGA (8x12.5) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
4.842 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (16M x 32) | Parallel | 166MHz | 12ns | 5.5ns | 1.7V ~ 1.95V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 84TWBGA |
3.888 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (128M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
|
Micron Technology Inc. |
IC SDRAM DDR3 4GB 78FBGA |
3.726 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (512M x 8) | Parallel | 1.066GHz | 15ns | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (8x10.5) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
3.888 |
|
- | Volatile | DRAM | SDRAM | 256Mb (8M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
2.988 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TWBGA |
8.154 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (64M x 8) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
|
|
|
Micron Technology Inc. |
IC DRAM LPDDR4 WFBGA |
5.598 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Micron Technology Inc. |
IC DRAM LPDDR4 WFBGA |
3.366 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Cypress Semiconductor |
IC FLASH 256M SPI 133MHZ 16SOIC |
8.496 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
|
Cypress Semiconductor |
IC FLASH 256M SPI 80MHZ 16SOIC |
5.832 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O | 80MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
|
Cypress Semiconductor |
IC FLASH 256M SPI 80MHZ 16SOIC |
5.490 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI - Quad I/O | 80MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
2.592 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
7.506 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
|
|
|
Alliance Memory, Inc. |
IC DRAM 2G PARALLEL 134FBGA |
5.148 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 2Gb (64M x 32) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Surface Mount | 134-VFBGA | 134-FBGA (10x11.5) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
8.262 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
|
|
|
Microchip Technology |
IC EEPROM 16K I2C 400KHZ 8SOIC |
2.340 |
|
- | Non-Volatile | EEPROM | EEPROM | 16Kb (2K x 8) | I²C | 400kHz | 5ms | 900ns | 2.5V ~ 5.5V | -55°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
Alliance Memory, Inc. |
IC DRAM 2G PARALLEL 96BGA |
8.442 |
|
Automotive, AEC-Q100 | Volatile | DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-BGA (13x9) |
|
|
|
Cypress Semiconductor |
IC SRAM 4M PARALLEL |
5.796 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 55ns | 55ns | 2.2V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
8.010 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 100ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |
|
|
|
Cypress Semiconductor |
IC FLASH 512M PARALLEL 64BGA |
4.536 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 100ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-Fortified BGA (13x11) |