Raddrizzatori - Singoli

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Corrente - Perdita inversa @ Vr

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 97/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
RS1D-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO214AC	116.508	-	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1K-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO214AC	19.752	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	7pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CDBA240-G	Comchip Technology	DIODE SCHOTTKY 40V 2A DO214AC	83.424	-	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	125°C (Max)
ES1GLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	145.236	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
ES1DLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	106.122	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
ES1DLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	79.602	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RBE2VAM20ATR	Rohm Semiconductor	DIODE SCHOTTKY 20V 2A TUMD2M	26.820	-	Schottky	20V	2A	460mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 20V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	125°C (Max)
ES1JL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	107.838	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS1H6LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SOD123W	115.902	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500nA @ 60V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RB551V-30TE-17	Rohm Semiconductor	DIODE SCHOTTKY 20V 500MA UMD2	50.160	-	Schottky	20V	500mA	470mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Surface Mount	SC-90, SOD-323F	UMD2	125°C (Max)
SS1H4LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SOD123W	49.014	-	Schottky	40V	1A	650mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500nA @ 40V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
SR215 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A DO204AC	26.550	-	Schottky	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
S07M-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 700MA DO219AB	282.552	Automotive, AEC-Q101	Standard	1000V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
SS14M RSG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A MICRO SMA	350.238	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 40V	50pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
SS24M RSG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A MICRO SMA	139.800	-	Schottky	40V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 40V	35pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
RMPG06J-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A MPG06	46.908	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	6.6pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
S3JB	ON Semiconductor	DIODE GP 600V 3A SMB	106.092	Automotive, AEC-Q101	Standard	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	18pF @ 0V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK56BTR	SMC Diode Solutions	DIODE SCHOTTKY 60V SMB	22.278	-	Schottky	60V	-	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	400pF @ 5V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
SBRS8140T3G	ON Semiconductor	DIODE SCHOTTKY 40V 1A SMB	238.224	Automotive, AEC-Q101	Schottky	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 125°C
RB520CS30L,315	Nexperia	DIODE SCHOTTKY 30V 100MA SOD882	36.788	-	Schottky	30V	100mA	450mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 10V	10pF @ 1V, 1MHz	Surface Mount	SOD-882	DFN1006-2	150°C (Max)
RB550VAM-30TR	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A TUMD2M	25.896	-	Schottky	30V	1A	520mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	30µA @ 10V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)
US1G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	99.870	-	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1D R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	83.340	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1D R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	58.908	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1J R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	52.224	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1J R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	32.766	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	15.744	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ER2JTR	SMC Diode Solutions	DIODE GEN PURP 600V 2A SMB	25.794	-	Standard	600V	2A	1.25V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
S115FP	ON Semiconductor	DIODE SCHOTTKY 150V 1A SOD123HE	24.390	Automotive, AEC-Q101	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	32pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RB551SS-30T2R	Rohm Semiconductor	DIODE SCHOTTKY 20V 500MA 1608	250.518	-	Schottky	20V	500mA	360mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Surface Mount	1608	1608 (0603)	125°C (Max)

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