Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 941/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Bourns |
DIODE GEN PURP 75V 150MA 1005 |
5.778 |
|
- | Standard | 75V | 150mA | 1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 2.5µA @ 75V | 4pF @ 1V, 100MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -40°C ~ 125°C |
|
|
Bourns |
DIODE GEN PURP 80V 100MA 1005 |
3.222 |
|
- | Standard | 80V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 80V | 4pF @ 1V, 100MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -40°C ~ 125°C |
|
|
Bourns |
DIODE GEN PURP 80V 100MA 0603 |
6.066 |
|
- | Standard | 80V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 75V | 4pF @ 1V, 100MHz | Surface Mount | 0603 (1608 Metric) | 0603 | -40°C ~ 125°C |
|
|
Bourns |
DIODE GEN PURP 80V 100MA 0603 |
4.896 |
|
- | Standard | 80V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 80V | 4pF @ 1V, 100MHz | Surface Mount | 0603 (1608 Metric) | 0603 | -40°C ~ 125°C |
|
|
Bourns |
DIODE SCHOTTKY 40V 30MA 1005 |
4.842 |
|
- | Schottky | 40V | 30mA | 370mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 40V | 1.5pF @ 1V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -40°C ~ 125°C |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 3A AXIAL |
7.938 |
|
- | Standard | 200V | 3A | 980mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | Axial | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 3A AXIAL |
5.184 |
|
- | Standard | 200V | 3A | 980mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | Axial | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 3A AXIAL |
3.834 |
|
- | Standard | 400V | 3A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 400V | - | Through Hole | DO-201AD, Axial | Axial | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A DO204AL |
4.914 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A DO204AL |
7.758 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 1A DO204AL |
5.886 |
|
- | Standard | 400V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 1A DO204AL |
3.996 |
|
- | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A DO204AL |
2.484 |
|
- | Standard | 200V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 100V 1A DO204AL |
3.906 |
|
- | Standard | 100V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 1.7A AXIAL |
5.850 |
|
- | Standard | 600V | 1.7A | 1.05V @ 1.7A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 2.6A AXIAL |
8.118 |
|
- | Standard | 600V | 2.6A | 1.05V @ 2.6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 100V 1A DO204AL |
5.688 |
|
- | Standard | 100V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A DO204AL |
6.282 |
|
- | Standard | 200V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 100V 1A AXIAL |
8.892 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A AXIAL |
8.136 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | R-1, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 1A AXIAL |
5.472 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | R-1, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 1A TP |
3.276 |
|
- | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 5A TP |
3.042 |
|
- | Standard | 400V | 5A | 1.5V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 400V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 5A TP |
8.748 |
|
- | Standard | 600V | 5A | 1.6V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 150°C (Max) |
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 1A DO41 |
7.992 |
|
- | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1mA @ 30V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 150°C (Max) |
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 1A DO41 |
6.750 |
|
- | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1mA @ 30V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 125°C (Max) |
|
|
ON Semiconductor |
DIODE SCHOTTKY 50V 1A DO41 |
4.284 |
|
- | Schottky | 50V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1mA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 125°C (Max) |
|
|
ON Semiconductor |
DIODE SCHOTTKY 50V 1A DO41 |
7.722 |
|
- | Schottky | 50V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1mA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 125°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 5A TP |
3.492 |
|
- | Standard | 600V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 600V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1.1A 2SMD |
5.580 |
|
- | Standard | 200V | 1.1A | 980mV @ 1.1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | - | Surface Mount | 2-SMD, J-Lead | SMD | 150°C (Max) |