Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 88/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
IDH16G65C6XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 34A TO220-2	307	-	Silicon Carbide Schottky	650V	34A (DC)	1.35V @ 16A	No Recovery Time > 500mA (Io)	0ns	53µA @ 420V	783pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDH10G120C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 10A TO220-2	7.428	CoolSiC™+	Silicon Carbide Schottky	1200V	10A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	62µA @ 1200V	525pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
1N5619	Microsemi	DIODE GEN PURP 600V 1A AXIAL	7.488	-	Standard	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 600V	25pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
IDH16G65C5XKSA2	Infineon Technologies	DIODE SCHOTKY 650V 16A TO220-2-1	23.940	CoolSiC™+	Silicon Carbide Schottky	650V	16A (DC)	1.7V @ 16A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	470pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
SCS212AGHRC	Rohm Semiconductor	DIODE SCHOTTKY 650V 12A TO-220-2	1.165	Automotive, AEC-Q101	Silicon Carbide Schottky	650V	12A (DC)	1.55V @ 12A	No Recovery Time > 500mA (Io)	0ns	240µA @ 600V	438pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
STPSC20065WY	STMicroelectronics	DIODE SCHOTTKY 650V 20A DO247	5.180	Automotive, AEC-Q101, ECOPACK®2	Silicon Carbide Schottky	650V	20A	1.45V @ 20A	No Recovery Time > 500mA (Io)	0ns	300µA @ 650V	1250pF @ 0V, 1MHz	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
VS-70HF40	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 70A DO203AB	283	-	Standard	400V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 150°C
VS-150EBU02	Vishay Semiconductor Diodes Division	DIODE GP 200V 150A POWIRTAB	8.148	FRED Pt®	Standard	200V	150A	1.13V @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	50µA @ 200V	-	Through Hole	PowerTab™, PowIRtab™	PowIRtab™	-55°C ~ 175°C
VS-HFA25PB60PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 25A TO247AC	22.956	HEXFRED®	Standard	600V	25A	1.7V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	20µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 150°C
VS-60EPU06PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AC	22.062	FRED Pt®	Standard	600V	60A	1.68V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	81ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 175°C
STPSC15H12D	STMicroelectronics	DIODE SCHOTTKY 1.2KV 15A TO220AC	6.056	-	Silicon Carbide Schottky	1200V	15A	1.5V @ 15A	No Recovery Time > 500mA (Io)	0ns	90µA @ 1200V	1200pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
VS-HFA16PB120PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 16A TO247AC	1.299	HEXFRED®	Standard	1200V	16A	3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	20µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 150°C
DSDI60-16A	IXYS	DIODE GEN PURP 1.6KV 63A TO247AD	15	-	Standard	1600V	63A	4.1V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	2mA @ 1600V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
C3D16065A	Cree/Wolfspeed	DIODE SCHOTTKY 650V 39A TO220-2	14.544	Z-Rec®	Silicon Carbide Schottky	650V	39A (DC)	1.8V @ 16A	No Recovery Time > 500mA (Io)	0ns	95µA @ 650V	878pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
SCS220AGC	Rohm Semiconductor	DIODE SCHOTTKY 650V 20A TO220AC	16.716	-	Silicon Carbide Schottky	650V	20A (DC)	1.55V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 600V	730pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
CDLL5819	Microsemi	DIODE SCHOTTKY 45V 1A DO213AB	6.552	-	Schottky	45V	1A	490mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	70pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-65°C ~ 125°C
SCS210KGC	Rohm Semiconductor	DIODE SCHOTTKY 1.2KV 10A TO220AC	27.654	-	Silicon Carbide Schottky	1200V	10A (DC)	1.6V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	550pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
1N5809	Microsemi	DIODE GEN PURP 100V 3A AXIAL	176	-	Standard	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
VS-85HF20	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 85A DO203AB	6.864	-	Standard	200V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 150°C
FJH1101	ON Semiconductor	DIODE GEN PURP 15V 150MA DO35	17.448	-	Standard	15V	150mA (DC)	1.1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	15pA @ 15V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
SCS220AGHRC	Rohm Semiconductor	DIODE SCHOTTKY 650V 20A TO-220-2	9.908	Automotive, AEC-Q101	Silicon Carbide Schottky	650V	20A (DC)	1.55V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 600V	730pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
C5D05170H	Cree/Wolfspeed	5A, 1700V, G5 ZREC SIC SCHOTTKY	9.336	Z-Rec®	Silicon Carbide Schottky	1700V	18A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1700V	425pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
VS-85HF40	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 85A DO203AB	7.176	-	Standard	400V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 180°C
1N5802US	Microsemi	DIODE GEN PURP 50V 1A D5A	6.210	-	Standard	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
IDH20G120C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 1.2KV 56A TO220-2	14.610	CoolSiC™+	Silicon Carbide Schottky	1200V	56A (DC)	1.8V @ 20A	No Recovery Time > 500mA (Io)	0ns	123µA @ 1200V	1050pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
1N1190A	GeneSiC Semiconductor	DIODE GEN PURP 600V 40A DO5	116	-	Standard	600V	40A	1.1V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 190°C
1N3595US	Microsemi	DIODE GEN PURP 4A B-MELF	6.564	-	Standard	-	4A (DC)	1V @ 200mA	Standard Recovery >500ns, > 200mA (Io)	3µs	1nA @ 125V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
VS-70HF80	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 70A DO203AB	46	-	Standard	800V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 800V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 150°C
STPSC40065CWY	STMicroelectronics	DIODE SCHOTTKY 650V 20A TO247	15.648	Automotive, AEC-Q101, ECOPACK®2	Silicon Carbide Schottky	650V	20A	1.45V @ 20A	No Recovery Time > 500mA (Io)	0ns	300µA @ 650V	1250pF @ 0V, 1MHz	Through Hole	TO-247-3	TO-247	-40°C ~ 175°C
IDW30G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 30A TO247-3	63	CoolSiC™+	Silicon Carbide Schottky	650V	30A (DC)	1.7V @ 30A	No Recovery Time > 500mA (Io)	0ns	220µA @ 650V	860pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C

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