Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 74/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
23.688 |
|
Automotive, AEC-Q101 | Schottky | 60V | 3A | 560mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 26.35ns | 100µA @ 60V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GP 200V 1A DO214AA |
10.101 |
|
- | Standard | 200V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
|
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Diodes Incorporated |
DIODE SBR 45V 10A POWERDI5 |
34.020 |
|
- | Super Barrier | 45V | 10A | 470mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
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|
Comchip Technology |
DIODE SCHOTTKY 40V 5A DO214AB |
57.384 |
|
- | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 380pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 150°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 180V 200MA SOD523 |
51.144 |
|
- | Standard | 180V | 200mA | 1.1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 10nA @ 180V | 4pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -65°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 400V 3A SMC |
257.946 |
|
- | Standard | 400V | 3A | 1.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | - | Surface Mount | DO-214AB, SMC | SMC | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 200V 4A SMC |
81.576 |
|
- | Standard | 200V | 4A | 1.05V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 3µA @ 200V | - | Surface Mount | DO-214AB, SMC | SMC | 175°C (Max) |
|
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|
Diodes Incorporated |
DIODE GEN PURP 400V 5A POWERDI5 |
187.254 |
|
- | Standard | 400V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 3.3µs | 10µA @ 400V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1.6KV 800MA SOD57 |
51.012 |
|
- | Avalanche | 1600V | 800mA | 1.25V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 1600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A DO214AA |
659.394 |
|
FRED Pt® | Standard | 600V | 4A | 1.3V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 39ns | 3µA @ 600V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A SMPC4.0 |
78.438 |
|
- | Schottky | 100V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
|
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|
STMicroelectronics |
DIODE SCHOTTKY 100V 2A SMB |
52.494 |
|
- | Schottky | 100V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 100V | - | Surface Mount | DO-214AA, SMB | SMB | 175°C (Max) |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5A DO201AD |
88.026 |
|
- | Schottky | 30V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5A DO201AD |
92.304 |
|
- | Schottky | 40V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5A DO201AD |
50.040 |
|
- | Schottky | 40V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 5A DO201AD |
23.820 |
|
- | Schottky | 20V | 5A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 100V 12A TO277B |
327.432 |
|
- | Schottky | 100V | 12A | 700mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | 660pF @ 5V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 150°C |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 40V 3A DPAK |
157.248 |
|
SWITCHMODE™ | Schottky | 40V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE GEN PURP 1KV 8A TO277-3 |
200.118 |
|
Automotive, AEC-Q101 | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | 3.37µs | 5µA @ 1000V | 118pF @ 0V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 1A DO41 |
165.978 |
|
- | Standard | 600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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|
ON Semiconductor |
DIODE GEN PURP 100V 1A DO41 |
154.434 |
|
- | Standard | 100V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
124.224 |
|
- | Standard | 400V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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|
ON Semiconductor |
DIODE GEN PURP 50V 1A DO41 |
92.862 |
|
- | Standard | 50V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 200V 1A DO41 |
52.818 |
|
- | Standard | 200V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
185.292 |
|
- | Avalanche | 200V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
94.578 |
|
- | Avalanche | 200V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
93.828 |
|
- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
31.230 |
|
- | Standard | 400V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 45pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
27.336 |
|
- | Standard | 100V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 2A DO214AA |
211.704 |
|
- | Schottky | 100V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |