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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 708/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
1N3912A
Microsemi
FAST RECOVERY RECTIFIER
8.424
*
-
-
-
-
-
-
-
-
-
-
-
-
1N3912AR
Microsemi
FAST RECOVERY RECTIFIER
3.780
*
-
-
-
-
-
-
-
-
-
-
-
-
1N3912R
Microsemi
FAST RECOVERY RECTIFIER
3.348
*
-
-
-
-
-
-
-
-
-
-
-
-
1N3913
Microsemi
FAST RECOVERY RECTIFIER
7.200
*
-
-
-
-
-
-
-
-
-
-
-
-
1N3913A
Microsemi
FAST RECOVERY RECTIFIER
3.114
*
-
-
-
-
-
-
-
-
-
-
-
-
1N3913AR
Microsemi
FAST RECOVERY RECTIFIER
5.652
*
-
-
-
-
-
-
-
-
-
-
-
-
1N3913R
Microsemi
FAST RECOVERY RECTIFIER
7.794
*
-
-
-
-
-
-
-
-
-
-
-
-
VS-T85HFL40S02
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 85A D-55
3.580
-
Standard
400V
85A
-
Fast Recovery =< 500ns, > 200mA (Io)
200ns
20mA @ 400V
-
Chassis Mount
D-55 T-Module
D-55
-
1N6391
Microsemi
SCHOTTKY BARRIER RECTIFIER
225
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTXV1N6642UB2
Microsemi
DIODE GEN PURP 75V 300MA UB2
4.374
Military, MIL-PRF-19500/578
Standard
75V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
-
Surface Mount
2-SMD, No Lead
UB2
-65°C ~ 175°C
JANTXV1N6642UB2R
Microsemi
DIODE GEN PURP 75V 300MA UB2
7.830
Military, MIL-PRF-19500/578
Standard
75V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
-
Surface Mount
2-SMD, No Lead
UB2
-65°C ~ 175°C
R30760
Microsemi
RECTIFIER
7.938
*
-
-
-
-
-
-
-
-
-
-
-
-
VS-T85HFL20S05
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 85A D-55
4.500
-
Standard
200V
85A
-
Fast Recovery =< 500ns, > 200mA (Io)
500ns
20mA @ 200V
-
Chassis Mount
D-55 T-Module
D-55
-
UES1305SM
Microsemi
RECTIFIER
6.318
*
-
-
-
-
-
-
-
-
-
-
-
-
UES1306SM
Microsemi
RECTIFIER
6.066
*
-
-
-
-
-
-
-
-
-
-
-
-
VS-T85HFL60S05
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 85A D-55
5.904
-
Standard
600V
85A
-
Fast Recovery =< 500ns, > 200mA (Io)
500ns
20mA @ 600V
-
Chassis Mount
D-55 T-Module
D-55
-
JANTXV1N1204AR
Microsemi
DIODE GEN PURP 400V 12A DO203AA
3.418
Military, MIL-PRF-19500/260
Standard, Reverse Polarity
400V
12A
1.35V @ 38A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 150°C
CDBJSC101700-G
Comchip Technology
DIODE SILICON CARBIDE POWER SCHO
3.906
-
Silicon Carbide Schottky
1700V
35A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1700V
1400pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
JANTXV1N1206A
Microsemi
DIODE GEN PURP 600V 12A DO203AA
4.248
Military, MIL-PRF-19500/260
Standard
600V
12A
1.35V @ 38A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 150°C
MBRH12040
GeneSiC Semiconductor
DIODE SCHOTTKY 40V 120A D-67
5.670
-
Schottky
40V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
-
D-67
-
-
MBRH120100
GeneSiC Semiconductor
DIODE SCHOTTKY 100V 120A D-67
3.472
-
Schottky
100V
120A
840mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH120100R
GeneSiC Semiconductor
DIODE SCHOTTKY 100V 120A D-67
2.574
-
Schottky, Reverse Polarity
100V
120A
840mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12020
GeneSiC Semiconductor
DIODE SCHOTTKY 20V 120A D-67
4.014
-
Schottky
20V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12020R
GeneSiC Semiconductor
DIODE SCHOTTKY 20V 120A D-67
7.902
-
Schottky, Reverse Polarity
20V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12030
GeneSiC Semiconductor
DIODE SCHOTTKY 30V 120A D-67
6.120
-
Schottky
30V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12030R
GeneSiC Semiconductor
DIODE SCHOTTKY 30V 120A D-67
6.588
-
Schottky, Reverse Polarity
30V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12035
GeneSiC Semiconductor
DIODE SCHOTTKY 35V 120A D-67
3.024
-
Schottky
35V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12035R
GeneSiC Semiconductor
DIODE SCHOTTKY 35V 120A D-67
5.958
-
Schottky, Reverse Polarity
35V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12045
GeneSiC Semiconductor
DIODE SCHOTTKY 45V 120A D-67
3.636
-
Schottky
45V
120A
650mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 20V
-
Chassis Mount
D-67
D-67
-
MBRH12045R
GeneSiC Semiconductor
DIODE SCHOTTKY 45V 120A D-67
4.806
-
Schottky, Reverse Polarity
45V
120A
700mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-
Chassis Mount
D-67 HALF-PAK
D-67
-55°C ~ 150°C