Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 70/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micro Commercial Co |
DIODE GEN PURP 200V 6A R6 |
32.700 |
|
- | Standard | 200V | 6A | 950mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 150pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 50V 6A R6 |
21.846 |
|
- | Standard | 50V | 6A | 950mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 150pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 600V 6A R6 |
26.808 |
|
- | Standard | 600V | 6A | 950mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 150pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 3A DO214AC |
39.378 |
|
- | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1.6KV 1.5A |
823.812 |
|
- | Avalanche | 1600V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 1600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO214BA |
188.556 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 8.5pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO214BA |
121.788 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 8.5pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
|
|
|
Comchip Technology |
DIODE GEN PURP 1KV 3A DO214AB |
379.950 |
|
- | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 60V 2A POWERDI123 |
85.338 |
|
- | Schottky | 60V | 2A | 620mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | POWERDI®123 | PowerDI™ 123 | -55°C ~ 125°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 30V 2A POWERDI323 |
22.536 |
|
- | Schottky | 30V | 2A | 450mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | 40pF @ 10V, 1MHz | Surface Mount | PowerDI™ 323 | PowerDI™ 323 | -65°C ~ 125°C |
|
|
|
Diodes Incorporated |
DIODE SBR 1A PDI123 |
25.722 |
|
SBR® | Super Barrier | 400V | 1A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 50µA @ 400V | - | Surface Mount | POWERDI®123 | PowerDI™ 123 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
619.500 |
|
- | Standard | 600V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
|
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|
STMicroelectronics |
DIODE SCHOTTKY 150V 2A DO15 |
51.030 |
|
- | Schottky | 150V | 2A | 820mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5µA @ 150V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | 175°C (Max) |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 20V 4A SMC |
26.316 |
|
- | Schottky | 20V | 4A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 120V 10A TO277-3 |
43.608 |
|
Automotive, AEC-Q101 | Schottky | 120V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 16.7ns | 25µA @ 120V | 608pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 1A SMA |
38.934 |
|
- | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 2A DO41 |
115.416 |
|
- | Standard | 600V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -40°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A SOD57 |
237.756 |
|
- | Avalanche | 600V | 2A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 600V | 40pF @ 0V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 90V 1A SMA |
47.034 |
|
- | Schottky | 90V | 1A | 790mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 90V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 1KV 6A R6 |
53.586 |
|
- | Standard | 1000V | 6A | 950mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 150pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
|
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Central Semiconductor Corp |
DIODE GEN PURP 250V 200MA SOD123 |
46.206 |
|
- | Standard | 250V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 1.5pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 4A DO201AD |
42.990 |
|
SWITCHMODE™ | Standard | 100V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 2A DO214AC |
212.586 |
|
- | Avalanche | 100V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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|
Diodes Incorporated |
DIODE SCHOTTKY 60V 500MA SOT23-3 |
352.896 |
|
- | Schottky | 60V | 500mA (DC) | 630mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 40µA @ 45V | 20pF @ 25V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 125°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 400V 4A AXIAL |
27.936 |
|
SWITCHMODE™ | Standard | 400V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
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|
Micro Commercial Co |
DIODE SCHOTTKY 40V 5A DO221AC |
216.204 |
|
- | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 300pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SMA-FL) | -55°C ~ 125°C |
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|
Micro Commercial Co |
DIODE SCHOTTKY 200V 5A DO221AC |
75.714 |
|
- | Schottky | 200V | 5A | 900mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 200V | - | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SMA-FL) | -55°C ~ 150°C |
|
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|
STMicroelectronics |
DIODE GEN PURP 600V 2A SMA |
47.562 |
|
- | Standard | 600V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 600V | - | Surface Mount | DO-214AC, SMA | SMA | -40°C ~ 175°C |
|
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|
STMicroelectronics |
DIODE SCHOTTKY 40V 3A SMBFLAT |
52.170 |
|
- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | DO-221AA, SMB Flat Leads | SMBflat | 150°C (Max) |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 100V 3A SMC |
58.470 |
|
- | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 150°C |