Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 668/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
DIODE SC SCHOTKY 1200V 15A TO220 |
5.076 |
|
- | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.7V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 375µA @ 1200V | 750pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
Microsemi |
DIODE GEN PURP 440V 1.75A A-MELF |
7.398 |
|
- | Standard | 440V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 80A TO247AC |
7.848 |
|
- | Standard | 200V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 80A TO247AC |
2.430 |
|
- | Standard | 200V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 80A TO247AC |
5.436 |
|
- | Standard | 400V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 80A TO247AC |
6.732 |
|
- | Standard | 400V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
5.346 |
|
- | Standard | 1200V | 80A | 1.35V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 85A DO5 |
7.776 |
|
- | Standard | 1400V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
|
IXYS |
DIODE AVALANCHE 1.2KV 49A DO203 |
6.660 |
|
- | Avalanche | 1200V | 49A | 1.55V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 180°C |
|
|
IXYS |
DIODE GEN PURP 1.2KV 49A DO203AB |
4.932 |
|
- | Standard | 1200V | 49A | 1.55V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 180°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 80A TO247AC |
2.988 |
|
- | Standard | 600V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 80A TO247AC |
6.372 |
|
- | Standard | 600V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 95A DO5 |
8.478 |
|
- | Standard | 400V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 95A DO5 |
6.786 |
|
- | Standard | 800V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
Microsemi |
DIODE GEN PURP 220V 2A AXIAL |
6.426 |
|
Military, MIL-PRF-19500/585 | Standard | 220V | 2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | Axial | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURPOSE |
2.736 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Microsemi |
DIODE GEN PURPOSE |
5.472 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 95A DO5 |
7.236 |
|
- | Standard | 400V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 95A DO5 |
3.816 |
|
- | Standard | 800V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 95A DO5 |
4.374 |
|
- | Standard | 1400V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 1400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 85A DO5 |
6.768 |
|
- | Standard | 1600V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
8.766 |
|
Military, MIL-PRF-19500/429 | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 200V 3A AXIAL |
4.212 |
|
Military, MIL-PRF-19500/411 | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 85A DO203AB |
3.834 |
|
- | Standard | 1400V | 85A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
|
|
Microsemi |
DIODE RECT ULT FAST REC A-PKG |
7.236 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A DO203AB |
8.820 |
|
- | Standard, Reverse Polarity | 800V | 8A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 95A DO5 |
2.052 |
|
- | Standard | 1400V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 1400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
|
|
Semtech |
.3A ULTRA FAST 100V |
8.460 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Semtech |
.3A ULTRA FAST 75V |
3.726 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Semtech |
.3A ULTRA FAST 115V |
5.508 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |