Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 648/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 50V 35A DO5 |
6.714 |
|
- | Standard, Reverse Polarity | 50V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 35A DO5 |
257 |
|
- | Standard | 200V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 35A DO5 |
14 |
|
- | Standard, Reverse Polarity | 200V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 300V 35A DO5 |
388 |
|
- | Standard | 300V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 300V 35A DO5 |
4.500 |
|
- | Standard, Reverse Polarity | 300V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 35A DO5 |
3.472 |
|
- | Standard | 600V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 35A DO5 |
5.202 |
|
- | Standard, Reverse Polarity | 600V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 700V 35A DO5 |
8.442 |
|
- | Standard | 700V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 700V 35A DO5 |
5.112 |
|
- | Standard, Reverse Polarity | 700V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 35A DO5 |
2.664 |
|
- | Standard | 800V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 35A DO5 |
4.266 |
|
- | Standard, Reverse Polarity | 800V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 900V 35A DO5 |
4.464 |
|
- | Standard | 900V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 900V 35A DO5 |
4.338 |
|
- | Standard, Reverse Polarity | 900V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
Semtech |
DIODE GEN PURP 500V 4.5A AXIAL |
5.220 |
|
- | Standard | 500V | 4.5A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 500V | 140pF @ 4V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
3.456 |
|
- | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 2µA @ 100V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 3A AXIAL |
6.480 |
|
- | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 2µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 500V 3A AXIAL |
6.102 |
|
- | Standard | 500V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 2µA @ 500V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
3.562 |
|
- | Standard | 600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 70V 200MA DO35 |
8.298 |
|
- | Standard | 70V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 70V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 180V 200MA DO35 |
3.132 |
|
- | Standard | 180V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 180V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 180V 200MA DO213 |
8.586 |
|
- | Standard | 180V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 180V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 225V 200MA DO35 |
5.202 |
|
- | Standard | 225V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 70A DO203AB |
8.046 |
|
- | Standard | 200V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 70A DO203AB |
4.302 |
|
- | Standard, Reverse Polarity | 200V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 100V 12A DO4 |
3.888 |
|
- | Standard | 100V | 12A | 800mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 12A DO4 |
5.508 |
|
- | Standard | 200V | 12A | 800mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 12A DO4 |
8.676 |
|
- | Standard | 400V | 12A | 800mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 12A DO4 |
7.398 |
|
- | Standard | 600V | 12A | 800mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 16A DO4 |
5.436 |
|
- | Standard | 800V | 16A | 1.1V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 150MA DO35 |
7.146 |
|
Military, MIL-PRF-19500/241 | Standard | 125V | 150mA | 920mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 2nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |