Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 644/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Semtech |
DIODE GEN PURP 1KV 1A AXIAL |
7.308 |
|
- | Standard | 1000V | 1A (DC) | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Through Hole | Axial | Axial | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 600V 150A POWERTAB |
3.924 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 150A | 1.63V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 8µA @ 600V | - | Through Hole | PowerTab® | PowerTab® | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 300MA AXIAL |
2.934 |
|
Military, MIL-PRF-19500/578 | Standard | 50V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Through Hole | D, Axial | - | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 95A DO203AB |
6.156 |
|
- | Standard | 1400V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 40A DO203AB |
5.832 |
|
- | Standard | 200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 40A DO203AB |
5.724 |
|
- | Standard, Reverse Polarity | 200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 80A DO203AB |
6.696 |
|
- | Standard | 1600V | 80A | 1.46V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 80A DO203AB |
8.892 |
|
- | Standard, Reverse Polarity | 1600V | 80A | 1.46V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 40A DO203AB |
4.716 |
|
- | Standard, Reverse Polarity | 200V | 40A | 1.95V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 3A D5B |
5.238 |
|
- | Standard | 400V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 40A DO203AB |
3.402 |
|
- | Standard, Reverse Polarity | 1400V | 40A | 1.5V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 160°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
2.484 |
|
Military, MIL-PRF-19500/286 | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURPOSE |
8.568 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 1A DO213AB |
6.399 |
|
- | Schottky | 20V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 20V | - | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 40A DO5 |
14 |
|
- | Standard, Reverse Polarity | 200V | 40A | 1.1V @ 40A | - | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
7.596 |
|
Military, MIL-PRF-19500/228 | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 300V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
2.358 |
|
Military, MIL-PRF-19500/360 | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURPOSE |
2.970 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 60A TO247AC |
1.323 |
|
- | Standard | 800V | 60A | 1.09V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 60V 1A DO213AB |
5.310 |
|
- | Schottky | 60V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE 1.2KV 60A TO247AC |
8.262 |
|
- | Standard | 1200V | 60A | 1.09V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A TO247AC |
8.532 |
|
- | Standard | 1200V | 40A | 1.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A DO203AB |
2.106 |
|
- | Standard | 200V | 60A | 1.3V @ 188A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 68A TO247-2 |
3.708 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 68A (DC) | 1.65V @ 24A | No Recovery Time > 500mA (Io) | - | 80µA @ 600V | 1265pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 40A TO247AC |
4.860 |
|
- | Standard | 1000V | 40A | 1.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 40A DO203AB |
2.952 |
|
- | Standard | 400V | 40A | 1.95V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 40A TO247AC |
7.920 |
|
- | Standard | 400V | 40A | 1.25V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Littelfuse |
DIODE SC SCHOTTKY 1200V 5A TO220 |
8.262 |
|
- | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 1200V | 260pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 95A DO203AB |
6.066 |
|
- | Standard | 1200V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 95A DO203AB |
5.544 |
|
- | Standard, Reverse Polarity | 1200V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |