Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 624/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 700V 5A DO215AB |
7.488 |
|
- | Standard | 700V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 700V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 5A DO215AB |
4.878 |
|
- | Standard | 800V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 800V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 90A 1600V TO-247 |
4.140 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V TO247AC |
3.654 |
|
- | Schottky | 40V | - | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Through Hole | TO-247-3 | TO-247AC | - |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 60A 600V TO-247A |
7.974 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 60A 600V TO-247A |
6.732 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 65A 1200V TO-247 |
1.409 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 90A 1600V TO-247 |
8.208 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
IXYS |
DIODE GEN PURP 1.2KV 30A TO247 |
868 |
|
- | Standard | 1200V | 30A | 2.26V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 50µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 (HA) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 25A DO203AA |
2.223 |
|
- | Standard, Reverse Polarity | 200V | 25A | 1.3V @ 78A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 8A TO220-2 |
2.754 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 2.1V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 30V 500MA DO35 |
3.906 |
|
- | Schottky | 30V | 500mA | 650mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 30V | 60pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
6.228 |
|
- | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
ZENER DIODE |
5.382 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
SIC DIODE 650V |
8.442 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 23.6A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 421pF @ 1V, 100kHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK-3 (TO-263-3) | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
6.426 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 12KV 3MA AXIAL |
5.436 |
|
- | Standard | 12000V | 3mA | 52V @ 20mA | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100nA @ 12000V | 4pF @ 5V, 1MHz | - | - | - | - |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 50A TO247 |
2.790 |
|
Automotive, AEC-Q101 | Standard | 600V | 50A | 2.1V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
PIV 30V IO 60A CHIP SIZE 200MIL |
4.068 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
PIV 60V IO 60A CHIP SIZE 200MIL |
3.978 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
IXYS |
DIODE GEN PURP 1200V 60A TO247AD |
3.222 |
|
- | Standard | 1200V | 60A | 1.19V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 30µA @ 1200V | 33pF @ 400V, 1MHz | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 30A TO247AC |
3.472 |
|
- | Standard | 1000V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 60V 1A DO41 |
3.240 |
|
- | Schottky | 60V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 80V 1A DO41 |
5.670 |
|
- | Schottky | 80V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 80V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
|
|
SMC Diode Solutions |
PIV 100V IO 60A CHIP SIZE 200MIL |
7.884 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A TO247AC |
3.258 |
|
Automotive, AEC-Q101 | Standard | 1200V | 16A | 3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 20µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 1.2KV 60A TO247 |
2.736 |
|
- | Standard | 1200V | 60A | 3.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 320ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE SILICON 1.2KV 5A TO252 |
6.804 |
|
- | Silicon Carbide Schottky | 1200V | 5A | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 260pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
8.388 |
|
- | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO247AC |
8.802 |
|
HEXFRED® | Standard | 600V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |