Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 620/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SWITCHING |
3.348 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 20A TO263-2 |
3.186 |
|
Z-Rec® | Schottky | 600V | 24A (DC) | 1.8V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 600V | 26pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 150MA DO35 |
8.226 |
|
Military, MIL-PRF-19500/241 | Standard | 125V | 150mA (DC) | 1V @ 200mA | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 150MA DO35 |
8.064 |
|
Military, MIL-PRF-19500/241 | Standard | 125V | 150mA | 920mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 2nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 8A TO252-3 |
7.650 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 2.1V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO263-2 |
3.096 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | 300pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 2A POWERMITE |
6.516 |
|
- | Standard | 200V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 300V 2A POWERMITE |
4.176 |
|
- | Standard | 300V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 2A POWERMITE |
7.164 |
|
- | Standard | 200V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 300V 2A POWERMITE |
3.508 |
|
- | Standard | 300V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 2A POWERMITE |
8.658 |
|
- | Standard | 400V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO220AC |
3.294 |
|
- | Standard | 800V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A DO203AA |
6.552 |
|
- | Standard | 200V | 6A | 1.1V @ 19A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 600V 30A TO220AC |
6.732 |
|
HiPerFRED™ | Standard | 600V | 30A | 2.52V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220AC |
2.088 |
|
- | Standard | 1200V | 20A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
IXYS |
DIODE AVALANCHE 1.2KV 2.3A |
2.268 |
|
- | Avalanche | 1200V | 2.3A | 1.34V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 700µA @ 1200V | - | Through Hole | Radial | - | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 1.2KV 15A TO247 |
5.166 |
|
- | Standard | 1200V | 15A | 2.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 260ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO220AB |
8.370 |
|
- | Standard | 800V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220AB |
2.196 |
|
- | Standard | 1200V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 200MA DO213AA |
6.012 |
|
- | Schottky | 20V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 20V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
|
|
|
IXYS |
DIODE GEN PURP 400V 60A TO3P |
9.044 |
|
HiPerFRED²™ | Standard | 400V | 60A | 1.47V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 1µA @ 400V | - | Through Hole | TO-3P-3, SC-65-3 | TO-3P | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 12A TO263-2 |
3.598 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 12A (DC) | 1.65V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 600V | 632pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 12A TO220AC |
6.084 |
|
Automotive, AEC-Q101, ECOPACK®2 | Schottky | 650V | 12A | 1.75V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 650V | 600pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SBD 10A 650V D2PAK-3 |
7.812 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 50V 200MA DO213AA |
7.416 |
|
Military, MIL-PRF-19500/231 | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 150MA DO35 |
6.174 |
|
- | Standard | 125V | 150mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO263AB |
4.572 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO263AB |
6.660 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 80A TO247-3 |
3.780 |
|
- | Standard | 600V | 80A (DC) | 2V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 40µA @ 600V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO220FP |
3.222 |
|
FRED Pt® | Standard | 600V | 30A | 2.6V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |